Enhanced photon lifetime in silicon nanowire arrays and increased efficiency of optical processes in them

2016 ◽  
Vol 48 (4) ◽  
Author(s):  
A. Efimova ◽  
A. Eliseev ◽  
V. Georgobiani ◽  
M. Kholodov ◽  
A. Kolchin ◽  
...  
2021 ◽  
pp. 129515
Author(s):  
Indrajit V. Bagal ◽  
Nilesh R. Chodankar ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Swati J. Patil ◽  
...  

2014 ◽  
Vol 24 (1) ◽  
pp. 105-105 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson

2013 ◽  
Vol 114 (8) ◽  
pp. 084303 ◽  
Author(s):  
Lei Hong ◽  
Rusli ◽  
Xincai Wang ◽  
Hongyu Zheng ◽  
Hao Wang ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1300-1305 ◽  
Author(s):  
Jeffrey M. Weisse ◽  
Dong Rip Kim ◽  
Chi Hwan Lee ◽  
Xiaolin Zheng

2012 ◽  
Vol 112 (11) ◽  
pp. 114306 ◽  
Author(s):  
Joseph P. Feser ◽  
Jyothi S. Sadhu ◽  
Bruno P. Azeredo ◽  
Keng H. Hsu ◽  
Jun Ma ◽  
...  

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.


Nano Research ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 4823-4835 ◽  
Author(s):  
Sitaramanjaneva Mouli Thalluri ◽  
Jerome Borme ◽  
Kang Yu ◽  
Junyuan Xu ◽  
Isilda Amorim ◽  
...  

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