Vertical Transfer of Uniform Silicon Nanowire Arrays via Crack Formation

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1300-1305 ◽  
Author(s):  
Jeffrey M. Weisse ◽  
Dong Rip Kim ◽  
Chi Hwan Lee ◽  
Xiaolin Zheng

2021 ◽  
pp. 129515
Author(s):  
Indrajit V. Bagal ◽  
Nilesh R. Chodankar ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Swati J. Patil ◽  
...  


2012 ◽  
Vol 96 ◽  
pp. 226-230 ◽  
Author(s):  
Guobin Jia ◽  
Martin Steglich ◽  
Ingo Sill ◽  
Fritz Falk


2014 ◽  
Vol 24 (1) ◽  
pp. 105-105 ◽  
Author(s):  
Junghoon Yeom ◽  
Daniel Ratchford ◽  
Christopher R. Field ◽  
Todd H. Brintlinger ◽  
Pehr E. Pehrsson


2013 ◽  
Vol 114 (8) ◽  
pp. 084303 ◽  
Author(s):  
Lei Hong ◽  
Rusli ◽  
Xincai Wang ◽  
Hongyu Zheng ◽  
Hao Wang ◽  
...  


2016 ◽  
Vol 48 (4) ◽  
Author(s):  
A. Efimova ◽  
A. Eliseev ◽  
V. Georgobiani ◽  
M. Kholodov ◽  
A. Kolchin ◽  
...  


2012 ◽  
Vol 112 (11) ◽  
pp. 114306 ◽  
Author(s):  
Joseph P. Feser ◽  
Jyothi S. Sadhu ◽  
Bruno P. Azeredo ◽  
Keng H. Hsu ◽  
Jun Ma ◽  
...  




2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.



Nano Research ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 4823-4835 ◽  
Author(s):  
Sitaramanjaneva Mouli Thalluri ◽  
Jerome Borme ◽  
Kang Yu ◽  
Junyuan Xu ◽  
Isilda Amorim ◽  
...  


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