Correspondence between classical and pseudoclassical descriptions of the spin degree of freedom of a relativistic particle in an external field

2013 ◽  
Vol 55 (11) ◽  
pp. 1351-1361 ◽  
Author(s):  
Yu. A. Markov ◽  
M. A. Markova ◽  
A. N. Vall ◽  
A. A. Shishmarev
Author(s):  
C. H. Marrows ◽  
B. J. Hickey

Conventional microelectronics exploits only the charge degree of freedom of the electron. Bringing the spin degree of freedom to bear on sensing, radio frequency, memory and logic applications opens up new possibilities for ‘more than Moore’ devices incorporating magnetic components that can couple to an external field, store a bit of data or represent a Boolean state. Moreover, the electron spin is an archetypal two-state quantum system that is an excellent candidate for a solid-state realization of a qubit.


Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2021 ◽  
Author(s):  
Hongchao Xie ◽  
Xiangpeng Luo ◽  
Gaihua Ye ◽  
Zhipeng Ye ◽  
Haiwen Ge ◽  
...  

Abstract Twist engineering, or the alignment of two-dimensional (2D) crystalline layers with desired orientations, has led to tremendous success in modulating the charge degree of freedom in hetero- and homo-structures, in particular, in achieving novel correlated and topological electronic phases in moiré electronic crystals. However, although pioneering theoretical efforts have predicted nontrivial magnetism and magnons out of twisting 2D magnets, experimental realization of twist engineering spin degree of freedom remains elusive. Here, we leverage the archetypal 2D Ising magnet chromium triiodide (CrI3) to fabricate twisted double bilayer homostructures with tunable twist angles and demonstrate the successful twist engineering of 2D magnetism in them. Using linear and circular polarization-resolved Raman spectroscopy, we identify magneto-Raman signatures of a new magnetic ground state that is sharply distinct from those in natural bilayer (2L) and four-layer (4L) CrI3. With careful magnetic field and twist angle dependence, we reveal that, for a very small twist angle (~ 0.5 degree), this emergent magnetism can be well-approximated by a weighted linear superposition of those of 2L and 4L CI3 whereas, for a relatively large twist angle (~ 5 degree), it mostly resembles that of isolated 2L CrI3. Remarkably, at an intermediate twist angle (~ 1.1 degree), its magnetism cannot be simply inferred from the 2L and 4L cases, because it lacks sharp spin-flip transitions that are present in 2L and 4L CrI3 and features a dramatic Raman circular dichroism that is absent in natural 2L and 4L ones. Our results demonstrate the possibility of designing and controlling the spin degree of freedom in 2D magnets using twist engineering.


1999 ◽  
Vol 82 (19) ◽  
pp. 3875-3878 ◽  
Author(s):  
Tohru Okamoto ◽  
Kunio Hosoya ◽  
Shinji Kawaji ◽  
Atsuo Yagi

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Sichen Duan ◽  
Yinong Yin ◽  
Guo-Qiang Liu ◽  
Na Man ◽  
Jianfeng Cai ◽  
...  

NaxCoO2 was known 20 years ago as a unique example in which spin entropy dominates the thermoelectric behavior. Hitherto, however, little has been learned about how to manipulate the spin degree of freedom in thermoelectrics. Here, we report the enhanced thermoelectric performance of GeMnTe2 by controlling the spin’s thermodynamic entropy. The anomalously large thermopower of GeMnTe2 is demonstrated to originate from the disordering of spin orientation under finite temperature. Based on the careful analysis of Heisenberg model, it is indicated that the spin-system entropy can be tuned by modifying the hybridization between Te-p and Mn-d orbitals. As a consequent strategy, Se doping enlarges the thermopower effectively, while neither carrier concentration nor band gap is affected. The measurement of magnetic susceptibility provides a solid evidence for the inherent relationship between the spin’s thermodynamic entropy and thermopower. By further introducing Bi doing, the maximum ZT in Ge0.94Bi0.06MnTe1.94Se0.06 reaches 1.4 at 840 K, which is 45% higher than the previous report of Bi-doped GeMnTe2. This work reveals the high thermoelectric performance of GeMnTe2 and also provides an insightful understanding of the spin degree of freedom in thermoelectrics.


Author(s):  
Yan Zhang ◽  
Liang Xu ◽  
Guoqiang Liu ◽  
Jianfeng Cai ◽  
Yinong Yin ◽  
...  

The emerging material GeMnTe2 provides a rare example to study the spin degree of freedom in thermoelectric transport, as it exhibits an anomalous Seebeck coefficient driven by the spin's thermodynamic...


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