Interface of transition metal oxides at the atomic scale

Author(s):  
Tong-Tong Shang ◽  
Xin-Yu Liu ◽  
Lin Gu
2015 ◽  
Vol 5 (1) ◽  
Author(s):  
F. G. Santomauro ◽  
A. Lübcke ◽  
J. Rittmann ◽  
E. Baldini ◽  
A. Ferrer ◽  
...  

Abstract Transition metal oxides are among the most promising solar materials, whose properties rely on the generation, transport and trapping of charge carriers (electrons and holes). Identifying the latter’s dynamics at room temperature requires tools that combine elemental and structural sensitivity, with the atomic scale resolution of time (femtoseconds, fs). Here, we use fs Ti K-edge X-ray absorption spectroscopy (XAS) upon 3.49 eV (355 nm) excitation of aqueous colloidal anatase titanium dioxide nanoparticles to probe the trapping dynamics of photogenerated electrons. We find that their localization at Titanium atoms occurs in <300 fs, forming Ti3+ centres, in or near the unit cell where the electron is created. We conclude that electron localization is due to its trapping at pentacoordinated sites, mostly present in the surface shell region. The present demonstration of fs hard X-ray absorption capabilities opens the way to a detailed description of the charge carrier dynamics in transition metal oxides.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1456-C1456
Author(s):  
Florian Hanzig ◽  
Josef Veselý ◽  
Mykhaylo Motylenko ◽  
Astrid Leuteritz ◽  
Hannes Mähne ◽  
...  

Resistive switching in MIM (metal-insulator-metal) stacks is an effect that enables a promising data storage technology which is able to overcome the size limitations of conventional non-volatile memories. The resistive switching effect was already demonstrated for several binary as well as ternary transition metal oxides (TiO2, NiO, SrTiO3, Nb2O5) [1,2]. The current models of the switching mechanisms suggest the important role of defects like oxygen vacancies [3]. Here, we report on the local structural and electronic properties of transition metal oxides embedded in MIM stacks that were obtained by using transmission electron microscopy and electron spectroscopy. We focus on the development of the stoichiometry across the MIM stack for amorphous and partial crystalline niobium oxides. Therefore, electron energy loss spectra (EELS) as well as the energy dispersive X-ray spectra (EDS) were collected on the atomic scale utilizing a nanometer probe in the scanning transmission electron microscope (STEM). The differences in the oxygen content among the electrodes and the concentration profiles at the metal/oxide interfaces in particular were investigated in dependence on the preparation method and on the electrode material. Besides, focusing on the electron loss near edge structure (ELNES) of the oxygen K edge we employed simulations using FEFF9 to describe the modifications of the electronic structure with variations in the oxygen content.


Author(s):  
R. Ai ◽  
H.-J. Fan ◽  
L. D. Marks

It has been known for a long time that electron irradiation induces damage in maximal valence transition metal oxides such as TiO2, V2O5, and WO3, of which transition metal ions have an empty d-shell. This type of damage is excited by electronic transition and can be explained by the Knoteck-Feibelman mechanism (K-F mechanism). Although the K-F mechanism predicts that no damage should occur in transition metal oxides of which the transition metal ions have a partially filled d-shell, namely submaximal valence transition metal oxides, our recent study on ReO3 shows that submaximal valence transition metal oxides undergo damage during electron irradiation.ReO3 has a nearly cubic structure and contains a single unit in its cell: a = 3.73 Å, and α = 89°34'. TEM specimens were prepared by depositing dry powders onto a holey carbon film supported on a copper grid. Specimens were examined in Hitachi H-9000 and UHV H-9000 electron microscopes both operated at 300 keV accelerating voltage. The electron beam flux was maintained at about 10 A/cm2 during the observation.


Author(s):  
Michel Fialin ◽  
Guy Rémond

Oxygen-bearing minerals are generally strong insulators (e.g. silicates), or if not (e.g. transition metal oxides), they are included within a rock matrix which electrically isolates them from the sample holder contacts. In this respect, a thin carbon layer (150 Å in our laboratory) is evaporated on the sections in order to restore the conductivity. For silicates, overestimated oxygen concentrations are usually noted when transition metal oxides are used as standards. These trends corroborate the results of Bastin and Heijligers on MgO, Al2O3 and SiO2. According to our experiments, these errors are independent of the accelerating voltage used (fig.l).Owing to the low density of preexisting defects within the Al2O3 single-crystal, no significant charge buildup occurs under irradiation at low accelerating voltage (< 10keV). As a consequence, neither beam instabilities, due to electrical discharges within the excited volume, nor losses of energy for beam electrons before striking the sample, due to the presence of the electrostatic charge-induced potential, are noted : measurements from both coated and uncoated samples give comparable results which demonstrates that the carbon coating is not the cause of the observed errors.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 256
Author(s):  
Christian Rodenbücher ◽  
Kristof Szot

Transition metal oxides with ABO3 or BO2 structures have become one of the major research fields in solid state science, as they exhibit an impressive variety of unusual and exotic phenomena with potential for their exploitation in real-world applications [...]


2021 ◽  
Vol 36 ◽  
pp. 514-550
Author(s):  
Zhihao Lei ◽  
Jang Mee Lee ◽  
Gurwinder Singh ◽  
C.I. Sathish ◽  
Xueze Chu ◽  
...  

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