Pattern formation during stationary heating and zone melting recrystallization of a silicon thin film

1999 ◽  
Vol 30 (13) ◽  
pp. 807-813 ◽  
Author(s):  
Won Tae Kim ◽  
Seong Gyoon Kim ◽  
Jae Sang Lee ◽  
Toshio Suzuki
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.


1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan

2021 ◽  
Vol 41 ◽  
pp. 102812
Author(s):  
Simone Casino ◽  
Thomas Beuse ◽  
Verena Küpers ◽  
Markus Börner ◽  
Tobias Gallasch ◽  
...  

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