Intermetallic growth kinetics for Sn-Ag, Sn-Cu, and Sn-Ag-Cu lead-free solders on Cu, Ni, and Fe-42Ni substrates

2006 ◽  
Vol 35 (7) ◽  
pp. 1581-1592 ◽  
Author(s):  
N. Dariavach ◽  
P. Callahan ◽  
J. Liang ◽  
R. Fournelle
2003 ◽  
Vol 32 (11) ◽  
pp. 1209-1213 ◽  
Author(s):  
Gaurav Sharma ◽  
C. M. Eichfeld ◽  
S. E. Mohney

2019 ◽  
Vol 37 (1) ◽  
pp. 36-45
Author(s):  
Christopher Breach

Purpose The purpose of this study is to demonstrate that isothermal intermetallic growth data for gold ball bonds can be non-parabolic with explanations of why deviation from parabolic kinetics may occur. Design/methodology/approach Intermetallic thickness measurements were made at the centre of cross-sectioned ball bonds that were isothermally annealed at 175°C. Intermetallic growth kinetics were modelled with a power law expression(x(t) − x0)2 = α1tα2. The parameters of the power law model were obtained by transformation of the response and explanatory variables followed by data fitting using simple linear regression (SLR). Findings Ball bonds made with 4 N (99.99%Au) and 3 N (99.9%Au) gold wires exhibited two consecutive time regimes of intermetallic growth denoted Regime I and Regime II. Regime I was characterised by reactive diffusion between the gold wire and the aluminium alloy bond pad, during which Al was completely consumed in the formation of Au–Al intermetallics with non-parabolic kinetics. In Regime II, the absence of a free supply of Al to sustain intermetallic growth led to the conclusion that thickening of intermetallics was caused by phase transformation of Au8Al3 to Au4Al. Ball bonds made with 2 N (99%Au) wire also exhibited non-parabolic kinetics in Regime I and negligible intermetallic thickening in Regime II. Research limitations/implications The analysis of intermetallic growth is limited to total intermetallic growth at a single temperature (175°C). Originality/value The value of this study lies in showing that the assumption that only parabolic intermetallic growth is observed in isothermally aged gold ball bonds is incorrect. Furthermore there is no need to assume parabolic growth kinetics because with an appropriate data transformation, followed by fitting the data to a power law model using SLR and with the use of statistical diagnostics, both the suitability of the kinetic model and the nature of the growth kinetics (parabolic or non-parabolic) can be determined.


2019 ◽  
Vol 32 (2) ◽  
pp. 65-72
Author(s):  
Ramani Mayappan ◽  
Amirah Salleh ◽  
Nurul Atiqah Tokiran ◽  
N.A. Awang

Purpose The purpose of this study is to investigate the addition of 0.05 Wt.% carbon nanotube (CNT) into the Sn-1.0Ag-0.5Cu (SAC) solder on the intermetallic (IMC) growth. Lead-based solders play an important role in a variety of applications in electronic industries. Due to the toxicity of the lead in the solder, lead-free solders were proposed to replace the lead-based solders. Sn-Ag-Cu solder family is one of the lead-free solders, which are proposed and considered as a potential replacement. Unfortunately, the Sn-Ag-Cu solder faces some reliability problems because of the formation of the thick intermetallic compounds. So the retardation of intermetallic growth is prime important. Design/methodology/approach The solder joint was aged under liquid state aging with soldering time from 1 to 60 min. Findings Two types of intermetallics, which are Cu6Sn5 and Cu3Sn were observed under a scanning electron microscope. The morphology of Cu6Sn5 intermetallic transformed from scallop to planar type as the soldering time increases. The addition of carbon nanotube into the SAC solder has retarded the Cu6Sn5 intermetallic growth rate by increasing its activation energy from 97.86 to 101.45 kJ/mol. Furthermore, the activation energy for the Cu3Sn growth has increased from 102.10 to 104.23 kJ/mol. Originality/value The increase in the activation energy indicates that the growth of the intermetallics was slower. This implies that the addition of carbon nanotube increases the reliability of the solder joint and are suitable for microelectronics applications.


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