Characterization by Internal Photoemission Spectroscopy of Single-Crystal CVD Diamond Schottky Barrier Diodes

2010 ◽  
Vol 39 (8) ◽  
pp. 1203-1208 ◽  
Author(s):  
Saman Majdi ◽  
Markus Gabrysch ◽  
Richard Balmer ◽  
Daniel Twitchen ◽  
Jan Isberg
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Cvd Diamond ◽  
Photoemission Spectroscopy ◽  
Schottky Barrier Diodes ◽  
Internal Photoemission

Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System

2019 ◽  
Author(s):  
T. Hanada ◽  
H. Umezawa ◽  
S. Ohmagari ◽  
D. Takeuchi ◽  
J.Higedon Kaneko
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes

Optically triggered Schottky barrier diodes in single crystal diamond

2005 ◽  
Vol 14 (3-7) ◽  
pp. 499-503 ◽  
Author(s):  
M. Brezeanu ◽  
S.J. Rashid ◽  
T. Butler ◽  
N.L. Rupesinghe ◽  
F. Udrea ◽  
...  
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Single Crystal Diamond

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer

2010 ◽  
Vol 19 (2-3) ◽  
pp. 208-212 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshiaki Mokuno ◽  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Cvd Diamond ◽  
Schottky Barrier Diodes ◽  
Single Crystalline

Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates

2016 ◽  
Author(s):  
Bo Song ◽  
Amit Kumar Verma ◽  
Kazuki Nomoto ◽  
Mingda Zhu ◽  
Debdeep Jena ◽  
...  
Keyword(s):  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes
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