Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing

2015 ◽  
Vol 45 (1) ◽  
pp. 499-508 ◽  
Author(s):  
R.E. Banai ◽  
J.C. Cordell ◽  
G. Lindwall ◽  
N.J. Tanen ◽  
S.-L. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Tin Sulfide ◽  
Post Deposition Annealing ◽  
Post Deposition

Layer-modulated, wafer scale and continuous ultra-thin WS2 films grown by RF sputtering via post-deposition annealing

2016 ◽  
Vol 4 (33) ◽  
pp. 7846-7852 ◽  
Author(s):  
Sajjad Hussain ◽  
Muhammad Farooq Khan ◽  
Muhammad Arslan Shehzad ◽  
Dhanasekaran Vikraman ◽  
Muhammad Zahir Iqbal ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Large Area ◽  
Post Deposition Annealing ◽  
Wafer Scale ◽  
Post Deposition ◽  
Insulating Substrates

Synthesis of large-area WS2 films by direct sulfurization of RF-sputtered WO3 thin films on insulating substrates.

Effects of Post-Deposition Processing on the Ultimate Grain Size in Metastable Semiconductor Thin Films to be Used in IR Detectors

1994 ◽  
Vol 343 ◽  
Author(s):  
Susanne M Lee
Keyword(s):  
Thin Films ◽  
Thick Films ◽  
Rf Sputtering ◽  
Solubility Limit ◽  
Nucleation And Growth ◽  
Separation Mechanism ◽  
Post Deposition Annealing ◽  
Ir Detectors ◽  
Solid Solubility Limit ◽  
Post Deposition

ABSTRACTThrough post-deposition annealing in a differential scanning calorimeter (DSC), we have manufactured both thin (200 nm) and bulk (8000 nm) single phase films of crystalline Ge1–xSnx, using rf sputtering. The Sn concentrations produced ranged up to 31 at.%, well beyond the solid solubility limit of this system. There was a marked difference, in the asdeposited structure, between thick and thin films produced under the same deposition conditions. Quantitative models for both systems are given in this paper and were deduced frorn DSC measurements in conjunction with electron microscopy. The metastable crystalline state in the thin films formed by nucleation and growth from an amorphous phase; whereas in the thick films, the desired phase was already present in the as-deposited films and only growth of preexisting grains was observed upon post-deposition annealing. When annealed to high temperature, the Sn phase separates from the alloys and we postulate here that it does so by nucleation and growth of β-Sn. With this hypothesis, the Sn separation in the 8000 nm thick films was accurately modeled by a two-mechanism process, however, in the 200 nm thick films, only one phase separation mechanism was necessary to accurately fit the data. Both models were corroborated by the subsequent melting behavior of the phase separated Sn which, though it varied depending on the sample being measured, always exhibited a melting endotherm starting 25–35°C lower than the bulk melting temperature of Sn. Speculation on the reasons for this are presented.

scholarly journals Post-Deposition Annealing Analysis for HfO[sub 2] Thin Films Using GIXRR∕GIXRD

2009 ◽  
Author(s):  
Wei-En Fu ◽  
Yong-Qing Chang ◽  
Yi-Ching Chen ◽  
Erik M. Secula ◽  
David G. Seiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Post Deposition Annealing ◽  
Post Deposition

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

scholarly journals Effect of Post-deposition Annealing in a Nitrogen Atmosphere on the Properties of SnO2 Thin Films

2017 ◽  
Vol 30 (1) ◽  
pp. 1-5
Author(s):  
Young-Hwan Song ◽  
Tae-Young Eom ◽  
Sung-Bo Heo ◽  
Jun-Ho Kim ◽  
Daeil Kim
Keyword(s):  
Thin Films ◽  
Nitrogen Atmosphere ◽  
Post Deposition Annealing ◽  
Sno2 Thin Films ◽  
Post Deposition
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