Iron Disilicide as High-Temperature Reference Material for Traceable Measurements of Seebeck Coefficient Between 300 K and 800 K

2016 ◽  
Vol 46 (1) ◽  
pp. 51-63 ◽  
Author(s):  
Pawel Ziolkowski ◽  
Christian Stiewe ◽  
Johannes de Boor ◽  
Ines Druschke ◽  
Knud Zabrocki ◽  
...  
Keyword(s):  
High Temperature ◽  
Reference Material ◽  
Seebeck Coefficient ◽  
Iron Disilicide ◽  
Temperature Reference

scholarly journals Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material

2012 ◽  
Vol 83 (9) ◽  
pp. 093905 ◽  
Author(s):  
Ashok T. Ramu ◽  
Phillip Mages ◽  
Chong Zhang ◽  
Jeffrey T. Imamura ◽  
John E. Bowers
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Reference Material ◽  
Seebeck Coefficient

Development of a high-temperature (295–900 K) Seebeck coefficient Standard Reference Material

2021 ◽  
Vol 36 (16) ◽  
pp. 3339-3352
Author(s):  
Joshua Martin ◽  
Zhan-Qian Lu ◽  
Winnie Wong-Ng ◽  
Sergiy Krylyuk ◽  
Dezhi Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Reference Material ◽  
Seebeck Coefficient ◽  
Standard Reference Material

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

HPHT synthesis and enhanced TE performance of Te and Sn/Se elements binary-doped CoSb3

2019 ◽  
Vol 12 (01) ◽  
pp. 1850105 ◽  
Author(s):  
Hairui Sun ◽  
Pin Lv ◽  
Chao Wang ◽  
Yunxian Liu ◽  
Xiaopeng Jia ◽  
...  
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
High Pressure ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Preparation Methods ◽  
Synthesis Time ◽  
Lattice Disorder ◽  
Positive Effect

A series of binary-doped CoSb3 with Te and Se/Sn bulk compounds Co4Sb[Formula: see text]TexSny/Sey ([Formula: see text] and 0.6, [Formula: see text] and 0.3), have been successfully prepared via a simple high pressure and high-temperature (HPHT) method. And, the influence of the doping elements on the microstructure of the samples synthesized under diverse pressures and the corresponding TE performance were studied in detail. Comparing with other preparation methods, the synthesis time of HPHT was acutely shortened. The obtained samples contain more grain boundaries, lattice disorder, dislocations and the possible “nanodot”, which have positive effect on reducing thermal conductivity. The experimental data indicate that the absolute values of Seebeck coefficient increases with pressure. What’s more, the thermal conductivities show a monotone decreasing trend as the synthesis pressure rises. The minimum value obtained is 1.93[Formula: see text]Wm[Formula: see text]K[Formula: see text] at normal temperature for Co4Sb[Formula: see text]Te[Formula: see text]Se[Formula: see text] prepared under 3[Formula: see text]GPa.

Characterization of YBa2Cu4O8 high temperature electrical properties and thermodynamic stability

1991 ◽  
Vol 6 (10) ◽  
pp. 2054-2058 ◽  
Author(s):  
B-S. Hong ◽  
T.O. Mason
Keyword(s):  
High Temperature ◽  
Electrical Property ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Range ◽  
Stability Range

Via in situ electrical property measurements (conductivity, Seebeck coefficient) over the temperature range 500–800 °C and oxygen partial pressure range 10−4-1 atm, the equilibrium transport properties and stability range of YBa2Cu4O8 were determined. YBa2Cu4O8 behaves like the intrinsically mixed-valent compound, magnetite (Fe3O4), with small variations in electrical properties with changes in oxygen partial pressure. The decomposition boundary to YBa2Cu3O6+y (or YBa2Cu3.5O7.5±z) and CuO occurs at log(po2, atm) = −1.24 × 104/T(K) + 11.01(773 ⋚ T(K) ⋚ 1073).

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

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