An Experimental and Theoretical Study of Cu0.2Zn0.8S Thin Film Grown by Facile Chemical Bath Deposition As an Efficient Photosensor

2018 ◽  
Vol 47 (10) ◽  
pp. 6128-6135
Author(s):  
Ghamdan M. M. Gubari ◽  
S. M. Ibrahim Mohammed ◽  
Nanasaheb P. Huse ◽  
Avinash S. Dive ◽  
Ramphal Sharma
2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.


Optik ◽  
2008 ◽  
Vol 119 (4) ◽  
pp. 180-184 ◽  
Author(s):  
Hai Yang ◽  
Shi-Bo Chen ◽  
Tian-Wei Xu ◽  
Hong-Fei Yu ◽  
Xue-Bing Xie ◽  
...  

2008 ◽  
Author(s):  
Fangming Cui ◽  
Lei Wang ◽  
Xiongfei Chen ◽  
Xia Sheng ◽  
Deren Yang ◽  
...  

2010 ◽  
Vol 256 (22) ◽  
pp. 6871-6875 ◽  
Author(s):  
Y. Zhang ◽  
X.Y. Dang ◽  
J. Jin ◽  
T. Yu ◽  
B.Z. Li ◽  
...  

2010 ◽  
Vol 6 (2) ◽  
pp. 121-126 ◽  
Author(s):  
Fitria Rahmawati ◽  
Sayekti Wahyuningsih ◽  
Pamularsih A.W

Thin film of TiO2 on graphite substrat has been prepared by means of chemical bath deposition. Cetyltrimethylammonium Bromide served  as linking agent of synthesized TiO2 to graphite substrate.The optical microscope and Scanning Electron Microscope (SEM) indicate that surfactant concentration affects the pore morphology of thin film Surface Area Analysis (SAA) of thin film indicated that the pore of thin film included in mesopore category. The anatase phase of TiO2 quantity arised as the surfactant concentration increase, gave high efficiency of induced photon conversion to current efficiency (% IPCE).   Keywords: thin film, TiO2, deposition, graphite


CrystEngComm ◽  
2018 ◽  
Vol 20 (38) ◽  
pp. 5735-5743 ◽  
Author(s):  
Ofir Friedman ◽  
Omri Moschovitz ◽  
Yuval Golan

Chemically graded Cd(S,Se) thin film and photovoltaic cell illustration.


2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.


2019 ◽  
Vol 6 (8) ◽  
pp. 084013 ◽  
Author(s):  
Sampat G Deshmukh ◽  
Vipul Kheraj ◽  
Kailash J Karande ◽  
Ashish K Panchal ◽  
Rohan S Deshmukh

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