Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process

2014 ◽  
Vol 21 (1) ◽  
pp. 9-13 ◽  
Author(s):  
Dong Xu ◽  
Bin Jiang ◽  
Feng-dan Cui ◽  
Yong-tao Yang ◽  
Hong-xing Xu ◽  
...  
2011 ◽  
Vol 509 (30) ◽  
pp. 7854-7860 ◽  
Author(s):  
A. Esmaielzadeh Kandjani ◽  
M. Farzalipour Tabriz ◽  
O. Mohammad Moradi ◽  
H.R. Rezaeian Mehr ◽  
S. Ahmadi Kandjani ◽  
...  

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.


Materials ◽  
2016 ◽  
Vol 9 (2) ◽  
pp. 87 ◽  
Author(s):  
Heberto Gómez-Pozos ◽  
Emma Arredondo ◽  
Arturo Maldonado Álvarez ◽  
Rajesh Biswal ◽  
Yuriy Kudriavtsev ◽  
...  

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