scholarly journals Processing and performance of organic insulators as a gate layer in organic thin film transistors fabricated on polyethylene terephthalate substrate

2013 ◽  
Vol 36 (4) ◽  
pp. 653-660 ◽  
Author(s):  
SAUMEN MANDAL ◽  
MONICA KATIYAR
2016 ◽  
Vol 3 (1) ◽  
pp. 1600294 ◽  
Author(s):  
Peter J. Diemer ◽  
Jacori Hayes ◽  
Evan Welchman ◽  
Rawad Hallani ◽  
Sujitra J. Pookpanratana ◽  
...  

Author(s):  
A. Awomolo ◽  
L. Jiang ◽  
J. Zhang ◽  
G. Jursich ◽  
C.G. Takoudis

This work focuses on dielectric materials in organic thin film transistors. Silicon oxides whose surfaces are modified with hexamethyldisilazane (HMDS) and octyltriethoxylSilane (OTS) are investigated. Organic semiconducting materials are used in the transistors made within the scope of this work. Although the devices made using our procedures did not exhibit satisfactory performance, we explored and understood some chemical and engineering aspects of the relevant dielectric/semiconductor interfaces in organic thin film transistors. Understanding these systems would help with improvements of the electrical properties and performance of such systems when plastic substrates are used at the next stage of the project.


2014 ◽  
Vol 15 (7) ◽  
pp. 1672-1677 ◽  
Author(s):  
Gi Sung Ryu ◽  
Seung Hyeon Jeong ◽  
Byoung Chul Park ◽  
Beob Park ◽  
Chung Kun Song

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

Sign in / Sign up

Export Citation Format

Share Document