Precise interferometric surface profiling of silicon wafer using sampling window and wavelength tuning

2021 ◽  
Author(s):  
Jurim Jeon ◽  
Sungtae Kim ◽  
Yangjin Kim
Keyword(s):  
Silicon Wafer ◽  
Wavelength Tuning ◽  
Surface Profiling ◽  
Sampling Window

scholarly journals Precise Measurement of the Surface Shape of Silicon Wafer by Using a New Phase-Shifting Algorithm and Wavelength-Tuning Interferometer

2020 ◽  
Vol 10 (9) ◽  
pp. 3250
Author(s):  
Fuqing Miao ◽  
Seokyoung Ahn ◽  
Yangjin Kim
Keyword(s):  
Silicon Wafer ◽  
Phase Error ◽  
Surface Profile ◽  
Phase Shifting ◽  
Wavelength Tuning ◽  
Surface Shape ◽  
Window Function ◽  
Phase Shift Error ◽  
Coupling Error ◽  
New Phase

In wavelength-tuning interferometry, the surface profile of the optical component is a key evaluation index. However, the systematic errors caused by the coupling error between the higher harmonics and phase shift error are considerable. In this research, a new 10N − 9 phase-shifting algorithm comprising a new polynomial window function and a DFT is developed. A new polynomial window function is developed based on characteristic polynomial theory. The characteristic of the new 10N − 9 algorithm is represented in the frequency domain by Fourier description. The phase error of the new algorithm is also discussed and compared with other phase-shifting algorithms. The surface profile of a silicon wafer was measured by using the 10N − 9 algorithm and a wavelength-tuning interferometer. The repeatability measurement error across 20 experiments was 2.045 nm, which indicates that the new 10N − 9 algorithm outperforms the conventional phase-shifting algorithm.

Experiments with a scanning tunneling microscope (STM) mounted in a scanning electron microscope (SEM)

1986 ◽  
Vol 44 ◽  
pp. 636-639
Author(s):  
Oliver C. Wells ◽  
Mark E. Welland
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mechanical Stability ◽  
Tunneling Current ◽  
Feedback System ◽  
Scanning Tunneling ◽  
Surface Profiling ◽  
Close Proximity ◽  
Metal Tip ◽  
Scanning Electron

Scanning tunneling microscopes (STM) exist in two versions. In both of these, a pointed metal tip is scanned in close proximity to the specimen surface by means of three piezos. The distance of the tip from the sample is controlled by a feedback system to give a constant tunneling current between the tip and the sample. In the low-end STM, the system has a mechanical stability and a noise level to give a vertical resolution of between 0.1 nm and 1.0 nm. The atomic resolution STM can show individual atoms on the surface of the specimen.A low-end STM has been put into the specimen chamber of a scanning electron microscope (SEM). The first objective was to investigate technological problems such as surface profiling. The second objective was for exploratory studies. This second objective has already been achieved by showing that the STM can be used to study trapping sites in SiO2.

Development of Silicon Wafer Packaging Technology for Deep UV LED

2020 ◽  
Vol 140 (7) ◽  
pp. 152-157
Author(s):  
Hirofumi Chiba ◽  
Yukio Suzuki ◽  
Yoshiaki Yasuda ◽  
Mitsuyasu Kumagai ◽  
Takaaki Koyama ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Packaging Technology ◽  
Uv Led ◽  
Deep Uv

Tunable stair-guide (TSG) DBR lasers for single current continuous wavelength tuning

1995 ◽  
Vol 31 (21) ◽  
pp. 1843-1845 ◽  
Author(s):  
K. Kudo ◽  
M. Kitamura ◽  
M. Yamaguchi ◽  
N. Kida ◽  
P. Delansay
Keyword(s):  
Wavelength Tuning ◽  
Dbr Lasers

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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