Nano-CsxWO3: Ultra-broadband nonlinear optical modulator for near-infrared and mid-infrared ultrafast fiber lasers generation

Nano Research ◽  
2022 ◽  
Author(s):  
Nan Li ◽  
Heng Jia ◽  
Ming Guo ◽  
Wenying Zhang ◽  
Ji Wang ◽  
...  
Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6176
Author(s):  
Zhen Wang ◽  
Kin-Pang Cheong ◽  
Mingsheng Li ◽  
Qiang Wang ◽  
Wei Ren

We report the theoretical and experimental study of calibration-free heterodyne phase-sensitive dispersion spectroscopy (HPSDS) in the mid-infrared using a direct current modulated mid-infrared quantum cascade laser (QCL). The modulation of QCL current at several hundred MHz or higher generates the synchronous frequency and intensity modulation of the QCL emission. An analytical model of the phase of the beat note signal in HPSDS is derived by considering the absorption and dispersion processes and incorporating the QCL modulation parameters. In the experiment, a 4.5 μm QCL modulated at 350 MHz was used to measure N2O at 200 Torr in a 10 cm gas cell. The N2O concentrations inferred from the analytical model were compared with the nominal values to show good agreement over the concentration range of 189−805 ppm with a standard deviation <3%. When the QCL wavelength was locked at the line-center of the molecular transition, it was of interest to find that the theoretical model was simplified to that used for near-infrared HPSDS with an electro-optical modulator for laser modulation.


2019 ◽  
Vol 7 (6) ◽  
pp. 699 ◽  
Author(s):  
Bin Huang ◽  
Zhe Kang ◽  
Jie Li ◽  
Mingyi Liu ◽  
Pinghua Tang ◽  
...  

1999 ◽  
Vol 607 ◽  
Author(s):  
M. Moldovan ◽  
K. T. Stevens ◽  
L. E. Halliburton ◽  
P. G. Schunemann ◽  
T. M. Pollak ◽  
...  

AbstractZinc germanium diphosphide (ZnGeP2) is a nonlinear optical material used in mid-infrared optical parametric oscillators. The near-infrared photoluminescence (PL) from single crystals of bulk ZnGeP2 has been studied as a function of excitation power, wavelength, temperature, and polarization. At 5 K, a broad PL band extending from 0.7 µm to beyond 1 µm is typically observed. Two distinct emissions with different polarization, power, and temperature behaviors have been resolved. These bands have peaks in intensity near 1.6 eV and 1.4 eV. The relative intensities of these two bands were found to correlate with the presence of phosphorus vacancies, as determined by electron paramagnetic resonance (EPR). A resonance in the intensity of the 1.6-eV band occurs when pumping into a level ∼90 meV below the minimum conduction band. This level is tentatively assigned to the shallow state.


2010 ◽  
Author(s):  
Nicolas Ducros ◽  
Franck Morin ◽  
Kevin Cook ◽  
Alexis Labruyère ◽  
Sébastien Février ◽  
...  

1997 ◽  
Vol 22 (5) ◽  
pp. 286 ◽  
Author(s):  
A. N. Starodumov ◽  
L. A. Zenteno ◽  
N. Arzate ◽  
P. Gavrilovic

2021 ◽  
Vol 64 (9) ◽  
Author(s):  
MengYu Zong ◽  
YuQian Zu ◽  
Jia Guo ◽  
Zhen Zhang ◽  
JingJing Liu ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.


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