Frequency conversion from near-infrared to mid-infrared in highly nonlinear optical fibres

Author(s):  
Nicolas Ducros ◽  
Franck Morin ◽  
Kevin Cook ◽  
Alexis Labruyère ◽  
Sébastien Février ◽  
...  
2007 ◽  
Vol 39 (12-13) ◽  
pp. 1103-1114 ◽  
Author(s):  
John D. Harvey ◽  
Stuart G. Murdoch ◽  
Stephane Coen ◽  
Rainer Leonhardt ◽  
David Mechin ◽  
...  

1999 ◽  
Vol 607 ◽  
Author(s):  
M. Moldovan ◽  
K. T. Stevens ◽  
L. E. Halliburton ◽  
P. G. Schunemann ◽  
T. M. Pollak ◽  
...  

AbstractZinc germanium diphosphide (ZnGeP2) is a nonlinear optical material used in mid-infrared optical parametric oscillators. The near-infrared photoluminescence (PL) from single crystals of bulk ZnGeP2 has been studied as a function of excitation power, wavelength, temperature, and polarization. At 5 K, a broad PL band extending from 0.7 µm to beyond 1 µm is typically observed. Two distinct emissions with different polarization, power, and temperature behaviors have been resolved. These bands have peaks in intensity near 1.6 eV and 1.4 eV. The relative intensities of these two bands were found to correlate with the presence of phosphorus vacancies, as determined by electron paramagnetic resonance (EPR). A resonance in the intensity of the 1.6-eV band occurs when pumping into a level ∼90 meV below the minimum conduction band. This level is tentatively assigned to the shallow state.


2021 ◽  
Vol 11 (14) ◽  
pp. 6440
Author(s):  
Tsendsuren Khurelbaatar ◽  
Je-Hoi Mun ◽  
Jaeuk Heo ◽  
Yunman Lee ◽  
Dong-Eon Kim

Energetic, few-fs pulses in the deep-UV region are highly desirable for exploring ultrafast processes on their natural time scales, especially in molecules. The deep-UV source can be generated from gas media irradiated with few-cycle near-infrared laser pulses via a third-order frequency conversion process, which is a perturbative mechanism in a relatively weak field regime. In this work, we demonstrate that the deep-UV generation process is significantly affected by also even higher nonlinear processes, such as the ionization depletion of gas and plasma-induced spatiotemporal distortion of propagating light. In the experiment, by optimizing the deep-UV (3.6–5.7 eV) generation efficiency, the highest deep-UV energy of 1 μJ was observed from a moderately ionized 0.8-bar Ar gas target. The observed UV spectra exhibited frequency shifts depending on the experimental conditions—gas type, gas pressure, and the gas cell location—supporting the importance of the highly nonlinear mechanisms. The experimental observations were well corroborated by numerical simulations.


2021 ◽  
Vol 64 (9) ◽  
Author(s):  
MengYu Zong ◽  
YuQian Zu ◽  
Jia Guo ◽  
Zhen Zhang ◽  
JingJing Liu ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.


Sign in / Sign up

Export Citation Format

Share Document