scholarly journals Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors

Nano Research ◽  
2022 ◽  
Author(s):  
Yulin Yang ◽  
Tong Yang ◽  
Tingting Song ◽  
Jun Zhou ◽  
Jianwei Chai ◽  
...  
Keyword(s):  
Selective Hydrogenation ◽  
Interface Properties ◽  
2D Semiconductors ◽  
High K

scholarly journals Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

AIP Advances ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 125314
Author(s):  
Lin Liang ◽  
Wei Li ◽  
Sichao Li ◽  
Xuefei Li ◽  
Yanqing Wu
Keyword(s):  
Gate Dielectric ◽  
Interface Properties ◽  
Hafnium Silicate ◽  
High K

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide

2009 ◽  
Vol 311 (7) ◽  
pp. 1950-1953 ◽  
Author(s):  
S. Oktyabrsky ◽  
V. Tokranov ◽  
S. Koveshnikov ◽  
M. Yakimov ◽  
R. Kambhampati ◽  
...  
Keyword(s):  
Interface Properties ◽  
Buried Channel ◽  
High K ◽  
Mos Structures

Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Analysis ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
X Ray ◽  
Bonding Structure ◽  
Thermal Growth ◽  
High K ◽  
Passivation Layers

ABSTRACTWe have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

2007 ◽  
Author(s):  
L. Pham-Nguyen ◽  
C. Fenouillet-Beranger ◽  
S. Cristoloveanu ◽  
A. Vandooren ◽  
M. Orlowski ◽  
...  
Keyword(s):  
Low Temperature ◽  
Interface Properties ◽  
High K

Control of Interface Properties of High-k/Ge with GeO2 Interface Layer (Invited)

2008 ◽  
Author(s):  
K. Kita ◽  
T. Nishimura ◽  
K. Nagashio ◽  
A. Toriumi
Keyword(s):  
Interface Layer ◽  
Interface Properties ◽  
High K
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