Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Analysis ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Interface Properties ◽  
X Ray ◽  
Bonding Structure ◽  
Thermal Growth ◽  
High K ◽  
Passivation Layers

ABSTRACTWe have studied the thermal growth chemistry and bonding structure of three promising ultrathin (5–20Å), nitrogen rich passivation layers on Si(100), namely-Si3N4, NO/Si(100) grown oxynitride and NO annealed SiO2. These films are intended to serve as substrates with excellent diffusion barrier/interface properties during deposition of high- K dielectrics such as Ta2O5, with tSiO2 equivalent <30Å for ULSI applications. In this paper we show that it is possible to form films with a tailored composition and nitrogen profile using techniques that can easily be integrated with existing silicon processing technology. Alternating growth and surface analysis by X-Ray Photoelectron Spectroscopy (XPS) is used to non destructively characterize the growth.

Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxidation Resistance ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Tantalum Pentoxide ◽  
Process Window ◽  
X Ray ◽  
Passivation Layers

ABSTRACTThe oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

scholarly journals Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 105
Author(s):  
Seung Hyun Park ◽  
Kyung Eon Kim ◽  
Sang Jeen Hong
Keyword(s):  
Photoelectron Spectroscopy ◽  
Yttrium Aluminum Garnet ◽  
Silicon Oxide ◽  
Ceramic Materials ◽  
High Plasma ◽  
Coating Materials ◽  
Continuous Increase ◽  
X Ray ◽  
Bonding Structure ◽  
Manufacturing Environments

Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

Surface Analysis by X-ray Photoelectron Spectroscopy of Sol−Gel Silica Modified with Covalently Bound Peptides

2007 ◽  
Vol 111 (40) ◽  
pp. 11850-11857 ◽  
Author(s):  
Sabrina S. Jedlicka ◽  
Jenna L. Rickus ◽  
Dmitry Y. Zemlyanov
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
X Ray ◽  
Covalently Bound

scholarly journals Surface Analysis of Nanocomplexes by X-ray Photoelectron Spectroscopy (XPS)

2017 ◽  
Vol 3 (6) ◽  
pp. 882-889 ◽  
Author(s):  
Efrat Korin ◽  
Natalya Froumin ◽  
Smadar Cohen
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
X Ray

Surface Analysis of Carbon–Hydrogen Bonds in Diamondlike Carbon Films by X-ray Photoelectron Spectroscopy

2009 ◽  
Vol 48 (9) ◽  
pp. 092304 ◽  
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Tatsuyuki Nakatani ◽  
Hiroyuki Sakaue ◽  
Takayuki Takahagi
Keyword(s):  
Hydrogen Bonds ◽  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Carbon Films ◽  
X Ray ◽  
Diamondlike Carbon ◽  
Carbon Hydrogen Bonds

scholarly journals Surface analysis of polymers end-capped with metal carboxylates using x-ray photoelectron spectroscopy

1986 ◽  
Vol 27 (1) ◽  
pp. 93-105 ◽  
Author(s):  
R. Jerome ◽  
Ph. Teyssie ◽  
J.J. Pireaux ◽  
J.J. Verbist
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Metal Carboxylates ◽  
X Ray
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