Application of nano-pulsed Nd:YAG laser to crystallization of amorphous Si thin films for next generation flat-panel display

2012 ◽  
Vol 13 (4) ◽  
pp. 587-591 ◽  
Author(s):  
Jaewon Lee ◽  
Jin-Ha Hwang ◽  
Sang Won Lee ◽  
Seungho Park ◽  
Seungwon Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Flat Panel Display ◽  
Next Generation ◽  
Flat Panel ◽  
Pulsed Nd:Yag Laser ◽  
Amorphous Si

Sol-Gel (Ba 0.67 Sr 0.33 )Ti x O y Thin Films for Flat Panel Display Application

2002 ◽  
Vol 49 (1) ◽  
pp. 221-229 ◽  
Author(s):  
W. Zhu ◽  
O. K. Tan ◽  
J. Ray ◽  
Md A. Imam ◽  
X. F. Chen
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Flat Panel Display ◽  
Flat Panel

scholarly journals Meters-Scale Large-Area Plasma Sources with Multiple Low-Inductance Antenna Units for Next-Generation Flat-Panel Display Processing

2007 ◽  
Vol 32 (2) ◽  
pp. 497-500 ◽  
Author(s):  
Daisuke Tsukiyama ◽  
Kousuke Takenaka ◽  
Yuichi Setsuhara ◽  
Kazuaki Nishisaka ◽  
Akinori Ebe
Keyword(s):  
Flat Panel Display ◽  
Next Generation ◽  
Large Area ◽  
Flat Panel ◽  
Plasma Sources

Formation and Properties of Carbon Nitride Thin Films by Pulsed Nd:YAG Laser Deposition

2001 ◽  
Vol 40 (Part 1, No. 2B) ◽  
pp. 1061-1063 ◽  
Author(s):  
Yoshiaki Suda ◽  
Kazuya Doi ◽  
Jun Namba ◽  
Fumiaki Imura ◽  
Hiroharu Kawasaki
Keyword(s):  
Thin Films ◽  
Nd:Yag Laser ◽  
Carbon Nitride ◽  
Laser Deposition ◽  
Pulsed Nd:Yag Laser

Crystallization and electrical properties of ITO:Ce thin films for flat panel display applications

2009 ◽  
Vol 517 (14) ◽  
pp. 4061-4064 ◽  
Author(s):  
Se Il Kim ◽  
Sang Hyun Cho ◽  
Sung Ryong Choi ◽  
Min Cheol Oh ◽  
Ji Hyang Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Flat Panel Display ◽  
Flat Panel

Chemically amplified i-line positive resist for next-generation flat panel display

2017 ◽  
Author(s):  
Hsing-Chieh Lee ◽  
Ying-Hao Lu ◽  
Shin-Yih Huang ◽  
Wei-Jen Lan ◽  
Makoto Hanabata
Keyword(s):  
Flat Panel Display ◽  
Next Generation ◽  
Flat Panel ◽  
Chemically Amplified ◽  
Positive Resist

Research on direct laser patterning of thin films for flat-panel display

2005 ◽  
Author(s):  
Reo Usui ◽  
Ryohei Satoh ◽  
Yoshiharu Iwata ◽  
Koji Nakagawa ◽  
Eiji Morinaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Laser Patterning ◽  
Direct Laser

Tantalum Nitride Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition Method

2000 ◽  
Vol 617 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Kazuya Doi. Jun Namba ◽  
Yoshiaki Suda
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nd:Yag Laser ◽  
Tantalum Nitride ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Pulsed Nd:Yag Laser ◽  
Diffraction Patterns

AbstractTantalum nitride (TAN) films have been deposited on silicon substrates by using a pulsed Nd:YAG laser deposition method. Experimental results suggest that the substrate temperature is one of the most important parameters to prepare crystalline tantalum nitride thin films. Glancing-angle X-ray diffraction patterns show that the films deposited at Ts ≤ 300 °C are almost amorphous. and crystalline Ta6N2.57 films are obtained at Ts ≥ 500 °C. Grain size of the film increases with increasing substrate temperature.

Preparation Of Crystalline Chromium Carbide Thin Films Synthesized By Pulsed Nd:YAG Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
Kazuya Doi ◽  
Satoshi Hiraishi ◽  
Hiroharu Kawasaki ◽  
Yoshiaki Suda
Keyword(s):  
Thin Films ◽  
Chromium Carbide ◽  
Nd:Yag Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Phase Reaction ◽  
X Ray Diffraction ◽  
Pulsed Nd:Yag Laser ◽  
Methane Gas ◽  
Diffraction Patterns

AbstractChromium carbide thin films are synthesized on Si(100) substrates by a pulsed Nd:YAG laser deposition (PLD) method as parameters of methane gas pressure. Glancing-angle X-ray diffraction patterns show that the film prepared by PLD method is a polycrystalline thin film composed of Cr3C2and Cr7C3, even in the base pressure. Diffraction patterns, however, are depended on the methane gas pressure. Grain size of the prepared film increases with increasing methane gas pressure. One of the reasons of these phenomena may be considered to the phase reaction between the ablated species, such as Cr, CrCx and CH4gas in the plasma plume.

Sign in / Sign up

Export Citation Format

Share Document