Alternative study of using electro-optic Pockels cell for massive reduction in the intensity of central frequency by multi-passing technique

2021 ◽  
Author(s):  
Ipsha Goswami ◽  
Minakshi Mandal ◽  
Sourangshu Mukhopadhyay
Keyword(s):  
Pockels Cell ◽  
Central Frequency ◽  
Electro Optic

Inverted Pockels cell electro-optic response to nuclear reactor pulsing

2011 ◽  
Author(s):  
Kyle A. Nelson ◽  
Kevin R. Arpin ◽  
Jeffrey A. Geuther ◽  
James L. Neihart ◽  
Todd A. Riedel ◽  
...  
Keyword(s):  
Nuclear Reactor ◽  
Pockels Cell ◽  
Electro Optic

Analysis of an Ultrafast MOSFET Based Pockels Cell Driver

2013 ◽  
Vol 679 ◽  
pp. 53-57 ◽  
Author(s):  
Sergey Biryuchinskiy ◽  
Konstantin Melnikov ◽  
Vladimir Melnikov
Keyword(s):  
High Voltage ◽  
Laplace Transformation ◽  
Pockels Cell ◽  
Optical Losses ◽  
Electro Optic

Analysis of fast MOSFET based High voltage switch for High Voltage Electro-Optic Devices is presented. Single MOSFET connection is considered by using Laplace transformation. Based on executed mathematical transforms, directions of improvement ways for typical engineering solutions are analyzed. Improvement directions including fastest operation, optical losses minimization, optical behaviors improvement, cost reducing, size and weight decreasing are considered. Modern Optical Arrangements of an Electro-Optic Shutter Schematic are compared. Different schematic designs of Q-Switch Drivers for Pockels Cell are presented. Parameters of constructed based on presented analysis Q-Switch Driver are given.

scholarly journals Electro-optic Q-switched Cr:LiSAF laser

2021 ◽  
Vol 2094 (2) ◽  
pp. 022034
Author(s):  
E E Popov ◽  
A A Sergeev ◽  
A P Pogoda ◽  
V M Petrov ◽  
A S Boreysho
Keyword(s):  
Solid State ◽  
Active Medium ◽  
Solid State Laser ◽  
Pockels Cell ◽  
Full Width ◽  
Half Maximum ◽  
Differential Absorption ◽  
Simultaneous Generation ◽  
Electro Optic ◽  
Mode A

Abstract We demonstrate electro-optic Q-switched solid state laser with Cr:LiSAF active medium. A single 50 ns pulse with 14 mJ of output energy is demonstrated. Simultaneous generation of several peaks with a step of 1.4 nm within the spectrum envelope with a full width at half maximum of 10.3 nm is demonstrated. For an electro-optic Q-switched mode a Pockels cell is used. Demonstrated laser can be used in differential absorption lidar systems.

Thermo-management of average power plasma electrode Pockels cell by heating electro-optic crystal side-face

2010 ◽  
Vol 22 (9) ◽  
pp. 1977-1981
Author(s):  
张君 Zhang Jun ◽  
张雄军 Zhang Xiongjun ◽  
吴登生 Wu Dengsheng ◽  
田晓琳 Tian Xiaolin ◽  
蒋新颖 Jiang Xinying ◽  
...  
Keyword(s):  
Average Power ◽  
Pockels Cell ◽  
Electro Optic ◽  
Side Face ◽  
Plasma Electrode

Indirect Amplitude Stabilization of a Tunable Laser through Control of the Intensity of a Pump Laser by an Electro-Optic Modulator

1993 ◽  
Vol 47 (2) ◽  
pp. 235-238 ◽  
Author(s):  
Chieu D. Tran ◽  
Ricardo J. Furlan
Keyword(s):  
Reference Signal ◽  
Tunable Laser ◽  
Tunable Lasers ◽  
Pump Laser ◽  
Pockels Cell ◽  
Electro Optic ◽  
F Center ◽  
Ion Laser ◽  
Amplitude Stabilization ◽  
Electro Optic Modulator

A novel method has been developed to stabilize the intensity of a tunable laser. In this method, the tunable laser is amplitude-stabilized indirectly by controlling the intensity of the pump laser through an electro-optic modulator placed between the pump and the tunable lasers. A small portion of the tunable laser beam was split into a reference photodiode to provide a reference signal for the feedback driver to drive the Pockels cell. Any fluctuation in the intensity of the tunable laser is compensated for by varying the intensity of the pump laser through the feedback driven Pockels cell. Results obtained on the Ti-sapphire laser pumped by an ion laser demonstrate that up to 100 × reduction in the laser noise level can be accomplished by use of this method. Furthermore, with this method, it is possible to adjust the intensity of the laser to be exactly equal for different wavelengths, and to maintain this level for as long as the stabilization is activated. Applications of this method for different types of tunable lasers, including dye and F-center lasers, are discussed.

Optoelectronic Scheme for Generation of Time Bound Low-Frequency Electronic Signal Using Multi-Passing of Light

2018 ◽  
Vol 0 (0) ◽  
Author(s):  
Baishali Sarkar ◽  
Sourangshu Mukhopadhyay
Keyword(s):  
Signal Processing ◽  
Low Frequency ◽  
Modulation Scheme ◽  
Pockels Cell ◽  
Pockels Effect ◽  
Wave Detection ◽  
Electro Optic ◽  
Real World Applications ◽  
Medical Signal ◽  
Electronic Signal

AbstractLinear electro-optic effect or Pockels effect is not only a very effective way to control the intensity or phase of a propagating radiation but it can also be used to generate a low-frequency electronic signal. Low-frequency electronic signal is useful in many real-world applications like bio-medical, signal processing, gravitational wave detection, etc. In this paper, the authors proposed a scheme for generation of time bound low-frequency electronic signal using multi-passing scheme of light through a Pockels cell with sawtooth electrical biasing. The Pockels cell is used in an amplitude modulation scheme.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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