Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer

Silicon ◽  
2022 ◽  
Author(s):  
Ramkumar Natarajan
Keyword(s):  
Passivation Layer ◽  
Gan Hemt ◽  
Blocking Voltage

Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiNx / HfO2 Dual Passivation Layer

2015 ◽  
Author(s):  
D.H. Kim ◽  
M.J. Kang ◽  
S.K. Eom ◽  
H.Y. Cha ◽  
K.S. Seo
Keyword(s):  
Passivation Layer ◽  
Si Substrate ◽  
Gan Hemt

Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

2005 ◽  
Vol 36 (8) ◽  
pp. 705-711 ◽  
Author(s):  
M.A. Mastro ◽  
J.R. LaRoche ◽  
N.D. Bassim ◽  
C.R. Eddy
Keyword(s):  
Passivation Layer ◽  
Uniform Strain ◽  
Gan Hemt

Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation

2013 ◽  
Vol 2 (8) ◽  
pp. N3064-N3067 ◽  
Author(s):  
P. Kotara ◽  
R. Zhytnytska ◽  
O. Hilt ◽  
E. Cho ◽  
F. Brunner ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Blocking Voltage

Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

2012 ◽  
Author(s):  
T. Katsuno ◽  
M. Kanechika ◽  
K. Itoh ◽  
K. Nishikawa ◽  
T. Uesugi ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Passivation Layer ◽  
Gan Hemt ◽  
Current Collapse
Sign in / Sign up

Export Citation Format

Share Document