Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

2019 ◽  
Vol 40 (12) ◽  
pp. 1921-1924 ◽  
Author(s):  
Sheng Gao ◽  
Quanbin Zhou ◽  
Xiaoyi Liu ◽  
Hong Wang
Keyword(s):  
Dielectric Layer ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
Gan Hemt ◽  
Current Collapse

scholarly journals Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

2014 ◽  
Vol 61 (4) ◽  
pp. 211-214 ◽  
Author(s):  
S. C. Liu ◽  
Y.-Y. Wong ◽  
Y.-C. Lin ◽  
E. Y. Chang
Keyword(s):  
Gate Dielectric ◽  
Passivation Layer ◽  
Low Leakage ◽  
Current Collapse

Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

2012 ◽  
Author(s):  
T. Katsuno ◽  
M. Kanechika ◽  
K. Itoh ◽  
K. Nishikawa ◽  
T. Uesugi ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Passivation Layer ◽  
Gan Hemt ◽  
Current Collapse

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

2021 ◽  
Vol 135 ◽  
pp. 106038
Author(s):  
Cong Wang ◽  
Yu-Chen Wei ◽  
Xiao Tan ◽  
Luqman Ali ◽  
Chang-Qiang Jing
Keyword(s):  
Gate Dielectric ◽  
Gan Hemt ◽  
Al2o3 Gate Dielectric

scholarly journals CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS

2020 ◽  
Vol 259 (4) ◽  
pp. 12-18
Author(s):  
I. M. Abolduev ◽  
N. V. Alkeev ◽  
V. S. Belyaev ◽  
E. V. Kaevitser ◽  
I. D. Kashlakov
Keyword(s):  
Initial Data ◽  
Technological Process ◽  
Semiconductor Device ◽  
Thermal Characteristics ◽  
Gan Hemt ◽  
Current Collapse ◽  
Operation Modes ◽  
Current Voltage ◽  
And Behavior ◽  
Insight Into

The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.

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