Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

Author(s):  
F. Iucolano ◽  
C. Miccoli ◽  
M. Nicotra ◽  
A. Stocco ◽  
F. Rampazzo ◽  
...  
2020 ◽  
Vol 35 (2) ◽  
pp. 025018
Author(s):  
I P Koziarskyi ◽  
E V Maistruk ◽  
I G Orletsky ◽  
M I Ilashchuk ◽  
D P Koziarskyi ◽  
...  

2014 ◽  
Vol 61 (8) ◽  
pp. 2774-2778 ◽  
Author(s):  
Quang Ho Luc ◽  
Edward Yi Chang ◽  
Hai Dang Trinh ◽  
Yueh Chin Lin ◽  
Hong Quan Nguyen ◽  
...  

2004 ◽  
Vol 831 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
K. Golaszewska ◽  
R. Lukasiewicz ◽  
A. Szczesny ◽  
...  

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.


2015 ◽  
Author(s):  
D.H. Kim ◽  
M.J. Kang ◽  
S.K. Eom ◽  
H.Y. Cha ◽  
K.S. Seo

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