Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT

Microelectronics Journal ◽

10.1016/j.mejo.2005.02.121 ◽

2005 ◽

Vol 36 (8) ◽

pp. 705-711 ◽

Author(s):

M.A. Mastro ◽

J.R. LaRoche ◽

N.D. Bassim ◽

C.R. Eddy

Keyword(s):

Passivation Layer ◽

Uniform Strain ◽

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TCAD-Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency & Breakdown Voltage

IETE Technical Review ◽

10.1080/02564602.2020.1824624 ◽

2020 ◽

pp. 1-9 ◽

Author(s):

Neha ◽

Vandana Kumari ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

Gan Hemt ◽

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Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiNx / HfO2 Dual Passivation Layer

10.7567/ssdm.2015.ps-6-16 ◽

2015 ◽

Author(s):

D.H. Kim ◽

M.J. Kang ◽

S.K. Eom ◽

H.Y. Cha ◽

K.S. Seo

Keyword(s):

Passivation Layer ◽

Si Substrate ◽

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Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer

Silicon ◽

10.1007/s12633-021-01646-8 ◽

2022 ◽

Author(s):

Ramkumar Natarajan

Keyword(s):

Passivation Layer ◽

Gan Hemt ◽

Blocking Voltage

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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Nanoscale Research Letters ◽

10.1186/s11671-019-3025-8 ◽

2019 ◽

Vol 14 (1) ◽

Author(s):

Chao Yang ◽

Xiaorong Luo ◽

Tao Sun ◽

Anbang Zhang ◽

Dongfa Ouyang ◽

...

Keyword(s):

Ion Implantation ◽

Breakdown Voltage ◽

Passivation Layer ◽

Gan Hemt ◽

High Breakdown Voltage

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Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695587 ◽

2013 ◽

Author(s):

F. Iucolano ◽

C. Miccoli ◽

M. Nicotra ◽

A. Stocco ◽

F. Rampazzo ◽

...

Keyword(s):

Passivation Layer ◽

Electrical Characteristics ◽

Gan Hemt ◽

Influence Of Properties

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Dependence of self-heating effect on passivation layer in AlGaN/GaN HEMT devices

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135303 ◽

2011 ◽

Author(s):

A. Haghshenas ◽

M. Fathipour ◽

A. Mojab

Keyword(s):

Passivation Layer ◽

Heating Effect ◽

Self Heating ◽

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Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

10.7567/ssdm.2012.f-5-1 ◽

2012 ◽

Author(s):

T. Katsuno ◽

M. Kanechika ◽

K. Itoh ◽

K. Nishikawa ◽

T. Uesugi ◽

...

Keyword(s):

Surface Treatment ◽

Passivation Layer ◽

Gan Hemt ◽

Current Collapse

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Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

IEEE Electron Device Letters ◽

10.1109/led.2019.2945175 ◽

2019 ◽

Vol 40 (12) ◽

pp. 1921-1924 ◽

Author(s):

Sheng Gao ◽

Quanbin Zhou ◽

Xiaoyi Liu ◽

Hong Wang

Keyword(s):

Dielectric Layer ◽

Gate Dielectric ◽

Passivation Layer ◽

Gan Hemt ◽

Current Collapse

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High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer

10.1109/wipdaasia51810.2021.9656064 ◽

2021 ◽

Author(s):

Siyu Deng ◽

Xiaorong Luo ◽

Jie Wei ◽

Yanjiang Jia ◽

Tao Sun ◽

...

Keyword(s):

Ion Implantation ◽

Breakdown Voltage ◽

Passivation Layer ◽

Gan Hemt ◽

High Breakdown Voltage

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

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