TCAD-Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency & Breakdown Voltage

GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication processes. The length between drain and gate (Lgd) has a greater impact on breakdown voltage of the device. A breakdown voltage of 800V with maximum current density of 536 mA/mm was obtained while Lgd was 15μm and the Wg was 100μm. The specific on-state resistance of this devices was 1.75 mΩ·cm2, which was 85 times lower than that of silicon MOSFET with same breakdown voltage. The results establish the foundation of low cost GaN HEMT power electronic devices.

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- ${k}$ Passivation Layer and High Acceptor Density in Buffer Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2857774 ◽

2018 ◽

Vol 65 (9) ◽

pp. 3848-3854 ◽

Cited By ~ 17

Author(s):

Toshiki Kabemura ◽

Shingo Ueda ◽

Yuki Kawada ◽

Kazushige Horio

Keyword(s):

Buffer Layer ◽

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

Gan Hemts

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Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667651 ◽

2010 ◽

Author(s):

Minglan Zhang ◽

Xiaoliang Wang ◽

Mingzeng Peng ◽

Xinyu Liu ◽

Ru Wang

Keyword(s):

Breakdown Voltage ◽

Power Switching ◽

Field Plate ◽

High Breakdown Voltage ◽

Plate Length ◽

Dc Characteristics ◽

Gan Hemts

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Passivation-layer thickness and field-plate optimization to obtain high breakdown voltage in AlGaN/GaN HEMTs with short gate-to-drain distance

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114153 ◽

2021 ◽

Vol 121 ◽

pp. 114153

Author(s):

Takuma Iwamoto ◽

Seiya Akiyama ◽

Kazushige Horio

Keyword(s):

Layer Thickness ◽

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Nanoscale Research Letters ◽

10.1186/s11671-019-3025-8 ◽

2019 ◽

Vol 14 (1) ◽

Cited By ~ 9

Author(s):

Chao Yang ◽

Xiaorong Luo ◽

Tao Sun ◽

Anbang Zhang ◽

Dongfa Ouyang ◽

...

Keyword(s):

Ion Implantation ◽

Breakdown Voltage ◽

Passivation Layer ◽

Gan Hemt ◽

High Breakdown Voltage

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Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

Solid State Electronics Letters ◽

10.1016/j.ssel.2020.10.002 ◽

2020 ◽

Vol 2 ◽

pp. 92-97

Author(s):

Yang-Hua Chang ◽

Jyun-Jhih Wang ◽

Gui-Lin Shen

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

Gan Hemt ◽

State Breakdown ◽

Double Channel

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Millimeter-wave AlGaN/GaN HEMT breakdown voltage enhancement by a recessed float field plate

Applied Physics Express ◽

10.7567/1882-0786/ab196c ◽

2019 ◽

Vol 12 (5) ◽

pp. 054007 ◽

Cited By ~ 1

Author(s):

Sheng Zhang ◽

Ke Wei ◽

Xiaohua Ma ◽

Yi Chuan Zhang ◽

Tianmin Lei

Keyword(s):

Millimeter Wave ◽

Breakdown Voltage ◽

Field Plate ◽

Gan Hemt

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Dependence of the Breakdown Voltage of 4H-SiC MESFET’s on the Field Plate and Step-Channel

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.668-669.803 ◽

2014 ◽

Vol 668-669 ◽

pp. 803-807

Author(s):

Xian Jun Zhang ◽

Na You

Keyword(s):

Breakdown Voltage ◽

Field Effect Transistor ◽

Breakdown Point ◽

Plate Structures ◽

Field Plate ◽

Plate Length ◽

Breakdown Mechanism ◽

Field Peak ◽

Drain Bias ◽

Effect Transistor

The breakdown mechanism of the 4H-SiC metal-semiconductor field effect transistor (4H-SiC MESFET) at a large drain bias is explored and the dependence of breakdown voltage on the field-plate and the step-channel is investigated by simulation. The results revealed that the breakdown occurs at the corner of the gate near to the drain. The channel step and the field-plate length have sensitive effect on the breakdown voltage. The breakdown characteristics are improved since the electric field peak is lowered at breakdown point in the step-channel and field-plate structures. The largest breakdown voltage can be achieved by optimizing the field-plate length.

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Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

10.7567/ssdm.2003.g-10-3 ◽

2003 ◽

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Plate Structure ◽

Field Plate ◽

Gan Hemt ◽

High Breakdown Voltage

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Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage

Defence Science Journal ◽

10.14429/dsj.68.12134 ◽

2018 ◽

Vol 68 (3) ◽

pp. 290 ◽

Cited By ~ 4

Author(s):

Mr Amit ◽

Dipendra Singh Rawal ◽

Sunil Sharma ◽

Sonalee Kapoor ◽

Robert Liashram ◽

...

Keyword(s):

Leakage Current ◽

Output Power ◽

Breakdown Voltage ◽

Close Agreement ◽

Simulation Software ◽

Plate Structures ◽

Field Plate ◽

Gan Hemt ◽

Source Voltage ◽

Simulation Results

The design and fabrication of gate/source connected multi-finger field plate structures using TCAD ATLAS simulation software is presented. The designed field plate structures are fabricated on indigenous AlGaN/GaN HEMT devices. AlGaN/GaN HEMT devices with field plate structures exhibit about three times improvement in breakdown voltage of device and are in close agreement with the simulation results. Integration of field plates in device have resulted in higher VDS (drain to source voltage) operation and improvement in output power of AlGaN/GaN HEMT devices. Incorporation of field plates also decrease the reverse leakage current of HEMT devices.

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