Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors
Keyword(s):
2019 ◽
Vol 11
(31)
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pp. 28407-28422
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Keyword(s):
1991 ◽
Vol 48-49
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pp. 409-413
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2001 ◽
Vol 40
(Part 1, No. 6B)
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pp. 4292-4298
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Keyword(s):
1968 ◽
Vol 115
(5)
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pp. 525
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