The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography

Author(s):  
Hyemin Jang ◽  
Moonkyong Na ◽  
Wook Bahng ◽  
Jung Woo Lee
CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...


2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>


2005 ◽  
Vol 14 (11-12) ◽  
pp. 1980-1983 ◽  
Author(s):  
A. Balducci ◽  
A. De Sio ◽  
Marco Marinelli ◽  
E. Milani ◽  
M.E. Morgada ◽  
...  

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