scholarly journals Memory effect in silicon nitride deposition using ICPCVD technique

2019 ◽  
Vol 13 (4) ◽  
pp. 299-304
Author(s):  
Sunil Kumar ◽  
D. S. Rawal ◽  
Hitendra K. Malik ◽  
Rajeev Sanwal ◽  
S. A. Khan ◽  
...  
Keyword(s):  
Memory Effect ◽  
Film Surface ◽  
Deposition Process ◽  
Ammonia Nitrogen ◽  
Film Deposition ◽  
Elastic Recoil ◽  
Film Property ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Device Applications

Abstract In this study, a plasma-based low-temperature, low-pressure SiN film deposition is investigated for device applications. Ammonia, nitrogen and silane are being used for optimization of the quality of SiN film for device passivation by ICPCVD. Characterization of SiN film is done using elastic recoil detection analysis, AFM, FTIR and ellipsometry. The effect of previous process parameters on subsequent process is called memory effect, which has been investigated by all the characterization techniques. During deposition, this effect has been observed for the same parameters that are used to maintain the stoichiometry of the film. It has been observed that some of the residues of gases used for SiN deposition remain present even after the deposition in the chamber and are carried over for the next deposition process and alter the film property, though parameters such as flow rate, temperature, pressure and time remain fixed. This memory effect alters the film surface roughness and stoichiometry thus affecting device characteristics after passivation.

Yttrium Oxyhydrides for Photochromic Applications: Correlating Composition and Optical Response

2018 ◽  
Author(s):  
Dmitrii Moldarev ◽  
Elbruz M. Baba ◽  
Marcos V. Moro ◽  
Chang C. You ◽  
Smagul Zh. Karazhanov ◽  
...  
Keyword(s):  
Medical Devices ◽  
Ternary Diagram ◽  
Optical And Electrical Properties ◽  
Ambient Conditions ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Photochromic Properties ◽  
Smart Windows ◽  
Elastic Recoil Detection ◽  
Detection Analysis

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

scholarly journals Elastic Recoil Detection Analysis of Hydrogen content in diamonds

2021 ◽  
Author(s):  
Hélène Bureau ◽  
Hicham Khodja ◽  
Imène Estève ◽  
Matthieu Charrondière-Lewis ◽  
Eloise Gaillou ◽  
...  
Keyword(s):  
Hydrogen Content ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Elastic Recoil Detection ◽  
Detection Analysis
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