scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

scholarly journals Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

2020 ◽  
Author(s):  
Laurent Souqui ◽  
Justinas Palisaitis ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Plasma ◽  
Film Deposition ◽  
Low Density ◽  
Scanning Electron Micrographs ◽  
Elastic Recoil ◽  
Plasma Cvd ◽  
Plasma Chemical Vapor Deposition

<div> <p>Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C<sub>2</sub>H<sub>5</sub>)<sub>3</sub>) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm<sup>3</sup> as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements<b>,</b> varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition.</p> </div> <br>

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Wavelet Analysis of PK2600 Measurement Data on Core-Rod

2012 ◽  
Vol 571 ◽  
pp. 551-554 ◽  
Author(s):  
Hong Sheng Li ◽  
Zhen Yu Li
Keyword(s):  
Vapor Deposition ◽  
Measurement Data ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Refractive Index Profile ◽  
Index Profile ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
The Core ◽  
Core Rod

The Core Rod made by Plasma Chemical Vapor Deposition process is measured by PK2600 for Refractive Index Profile. The measurement data is very important to justify the core rod quality. A method based on DWT is presented in this paper to discover some information which is difficult to emerge according to conventional way. The analysis result can be used to optimize the core-rod making process.

CVD Diamond as Dielectric Material for Capacitor Applications

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Heidger ◽  
S. Fries-Carr ◽  
J. Weimer ◽  
B. Jordan ◽  
R. Wu
Keyword(s):  
Dielectric Constant ◽  
Loss Tangent ◽  
Microwave Plasma ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Temperature Stability ◽  
Cvd Diamond ◽  
Dielectric Constants ◽  
Plasma Chemical Vapor Deposition ◽  
Deposition Parameters

ABSTRACTDiamond films synthesized using Microwave Plasma Chemical Vapor Deposition (MWCVD) were evaluated for use as dielectric material for high power and high temperature capacitors. The effect that the deposition parameters and annealing have on the frequency and temperature stability of the electronic properties was investigated. Dielectric constants ranging between 8.0 and 4.2 and resistivities between 1× 108 ohm-cm and 5×1014 ohm-cm were obtained. Diamond produced using less than 6.6% methane had very stable dielectric constants over the frequency range of 100 Hz to IMHz, and the loss tangent was less than 0.01. Adding oxygen to the precursor gas increased the dielectric constant and lowered the loss tangent of CVD diamond, but the resistivity was also lowered. As the temperature increased to 300°C, the dielectric constant and loss tangent increased. However, when diamond was annealed to 700°C, there was less than a 5% change in the dielectric constant from 23°C to 300°C.

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