A transistorized double time delay switch of high accuracy and reproducibility

1963 ◽  
Vol 8 (2) ◽  
pp. 321-323
Author(s):  
H. Kruijswijk ◽  
J.G. Pelle
Keyword(s):  
Author(s):  
Lizhena Zhang ◽  
Zhenhai Li ◽  
Kai Chen ◽  
Guilian Chen ◽  
Yong Zhao

2013 ◽  
Vol 62 (11) ◽  
pp. 2998-3005 ◽  
Author(s):  
Yong Huang ◽  
Jingli Lin ◽  
Mohaned Giess
Keyword(s):  

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 174931-174942
Author(s):  
Mateus Da Rosa Zanatta ◽  
Joao Paulo Carvalho Lustosa Da Costa ◽  
Felix Antreich ◽  
Martin Haardt ◽  
Gordon Elger ◽  
...  

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 216162-216175
Author(s):  
Weilin Ren ◽  
Rongjun Cheng ◽  
Hongxia Ge ◽  
Qi Wei

2013 ◽  
Vol 373-375 ◽  
pp. 1561-1566
Author(s):  
Qiang Song ◽  
Chun Yu Peng ◽  
Hong Gang Zhou ◽  
Shou Biao Tan

In this paper, we introduced an effective time delay model for SRAM compiler, which represents an important performance of SRAM. Our method divide the delay time into several periods, including decoder delay, word line delay, bit line delay and SA delay. The theory is useful in predicting the delay time when the SRAM size is changed. Simulations by Hsim in 65nm CMOS process proves a high accuracy.


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