The two-dimensional generalized analysis of thermal stability of composite superconductors

Cryogenics ◽  
1992 ◽  
Vol 32 ◽  
pp. 431-434
Author(s):  
V.R Romanovskii
MRS Advances ◽  
2018 ◽  
Vol 3 (45-46) ◽  
pp. 2809-2814 ◽  
Author(s):  
Naoki Higashitarumizu ◽  
Hayami Kawamoto ◽  
Keiji Ueno ◽  
Kosuke Nagashio

ABSTRACTMechanical exfoliation is performed to fabricate ultrathin SnS layers, and chemical/thermal stability of SnS layers is discussed in comparison with GeS, toward piezoelectric nanogenerator application. Both SnS and GeS are difficult to be exfoliated under 10 nm using tape exfoliation due to strong interlayer ionic bonding by lone pair electrons in Sn or Ge atoms. Au-mediated exfoliation enables to fabricate larger-scale ultrathin SnS and GeS layers thinner than 10 nm owing to strong semi-covalent bonding between Au and S atoms, but GeS surface immediately degrades during Au etching in an oxidative KI/I2 solution. Although the surface of SnS after the Au-mediated exfoliation reveals several-nm oxide layer of SnOx, the surface morphology retains the flatness unlike the case of GeS. The SnS layers are more robust than GeS against the thermal annealing as well as the chemical treatment, suggesting that SnOx works as a passivation layer for SnS. Self-passivated SnS monolayer can be obtained by a controlled post-oxidation.


Genetics ◽  
1981 ◽  
Vol 98 (4) ◽  
pp. 729-745
Author(s):  
R Michael Sheetz ◽  
Robert C Dickson

ABSTRACT Using genetic and biochemical techniques, we have determined that β-galactosidase in the yeast Kluyveromyces lactis is coded by the LAC4 locus. The following data support this conclusion: (1) mutations in this locus result in levels of β-galactosidase activity 100-fold lower than levels in uninduced wild type and all other lac- mutants; (2) three of five lac4 mutations are suppressible by an unlinked suppressor whose phenotype suggests that it codes for a nonsense suppressor tRNA; (3) a Lac+ revertant, bearing lac4–14 and this unlinked suppressor, has subnormal levels of β-galactosidase activity, and the Km for hydrolysis of o-nitrophenyl-β, D-galactoside and the thermal stability of the enzyme are altered; (4) the level of β-galactosidase activity per cell is directly proportional to the number of copies of LAC4; (5) analysis of cell-free extracts of strains bearing mutations in LAC4 by two-dimensional acryl-amide gel electrophoresis shows that strains bearing lac4–23 and lac4–30 contain an inactive β-galactosidase whose subunit co-electrophoreses with the wild-type subunit, while no subunit or fragment of the subunit is obs0ervable in lac4–8, lac4–14 or lac4–29 mutants; (6) of all lac4 mutants, only those bearing lac4–23 or lac4–30 contain a protein that cross-reacts with anti-β-galactosidase antibody, a finding consistent with the previous result; and (7) β-galactosidase activity in several Lac+ revertants of strains carrying lac4–23 or lac4–30 has greatly decreased thermostability.


1989 ◽  
Vol 160 ◽  
Author(s):  
P.J. Wang ◽  
B.S. Meyerson ◽  
P.M. Fahey ◽  
F. LeGoues ◽  
G.J. Scilla ◽  
...  

AbstractThe thermal stability of Si/Si0.85Ge0.15/Si p-type modulation doped double heterostructures grown by the Ultra High Vacuum/ Chemical Vapor Deposition technique has been examined by Hall measurement, transmission electron microscopy, secondary ion mass spectroscopy, and Raman spectroscopy. As deposited heterostructures showed two-dimensional hole gas formation at the abrupt Si/SiGe and SiGe/Si interfaces. Annealing at 800 °C. for 1 hr. caused the diffusion of boron acceptors to the heterointerfaces, degrading the hole mobilities observed in the two dimensional hole gas. Rapid redistribution of boron, causing a loss of the 2 dimensional carrier behavior, was observed after a 900 °C, 0.5 hr. anneal. Neither Ge interdiffusion nor the generation of misfit dislocations were observed in the annealed heterostructures, evincing the defect-free crystal quality of these as-grown strained heteroepitaxial layers. The superior stability of these heterostructures have strong positive implications for Si:Ge heterojunction devices.


2005 ◽  
Vol 15 (2) ◽  
pp. 3410-3413 ◽  
Author(s):  
Kenji Watanabe ◽  
T. Mitsuhashi ◽  
N. Nanato ◽  
S.B. Kim ◽  
S. Murase ◽  
...  

2012 ◽  
Vol 68 (9) ◽  
pp. m235-m237 ◽  
Author(s):  
Wei-Lu Xiong ◽  
Qing-Yan Liu ◽  
Na Zhang ◽  
Leng Wang

The title compound, [Zn(C8H4O4)]n, consists of one ZnIIcation and one benzene-1,2-dicarboxylate dianion (BDC2−) as the building unit. The ZnIIcation is four-coordinated by four carboxylate O atoms from four dianionic BDC2−ligands in a distorted tetrahedral geometry. The ZnIIcations are linked by the BDC2−ligands to generate a structure featuring two-dimensional zinc–carboxylate layers containing left- and right-handed helical chains. The two-dimensional layers are stacked along theadirection. The thermal stability of the title compound has been studied.


2016 ◽  
Vol 42 (7) ◽  
pp. 8419-8424 ◽  
Author(s):  
Kun Wang ◽  
Youfu Zhou ◽  
Wentao Xu ◽  
Decai Huang ◽  
Zhiguang Wang ◽  
...  

2013 ◽  
Vol 69 (11) ◽  
pp. 1314-1316
Author(s):  
Wen-Juan Ma ◽  
Guo-Ting Li

The title compound, [Zn(C8H6N4O3)]nor [Zn(L)]n[H2Lis 3-(6-oxo-6,9-dihydro-1H-purin-1-yl)propionic acid], crystallized as a nonmerohedral twin. The ZnIIcation is four-coordinated, ligated by two carboxylate O atoms from twoLligands and two N atoms from another two ligands. Each ligand bridges four ZnIIcentres, extending the structure into a three-dimensional polymer with a 4-connected (65,41) topological structure containing two-dimensional homochiral layers constructed from one-dimensional metal–organic helices. Investigation of the thermal stability of the compound shows that the network has very high thermostability and is stable up to 720 K.


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