Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 107-112 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroshi Nakao ◽  
Hitoshi Kawanami ◽  
Ryuichi Toba
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Strain Relaxation

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

2011 ◽  
Vol 110 (3) ◽  
pp. 033501 ◽  
Author(s):  
Y. Kotsar ◽  
B. Doisneau ◽  
E. Bellet-Amalric ◽  
A. Das ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

Damage Removal and Strain Relaxation in As + -Implanted Si 0.57 Ge 0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy

1997 ◽  
Vol 14 (3) ◽  
pp. 209-212 ◽  
Author(s):  
Zou Lü-fan (Zou Lyu-fan) ◽  
Wang Zhan-guo ◽  
Sun Dian-zhao ◽  
Fan Ti-wen ◽  
Liu Xue-feng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source

scholarly journals Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 899
Author(s):  
Hong-Yi Yang ◽  
Ikai Lo ◽  
Cheng-Da Tsai ◽  
Ying-Chieh Wang ◽  
Huei-Jyun Shih ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Lattice Relaxation ◽  
Lattice Constants ◽  
Anisotropic Strain ◽  
Transmission Electron ◽  
Quadratic Deviation

Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the anisotropic strain was then analyzed by observing the microscopic atomic layers. We found that the vertical lattice strain along the c-axis followed a linear relationship, while the lateral lattice strain along the a-axis exhibited a quadratic deviation. The lattice mismatch is about 0.94% at the interface between the GaN microdisks and the γ-LiAlO2 substrate, which induces the anisotropic strain during epi-growth.

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

2004 ◽  
Vol 96 (12) ◽  
pp. 7665-7674 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Deryabin ◽  
A. K. Gutakovskii ◽  
M. A. Revenko ◽  
L. V. Sokolov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Strain Relaxation
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