Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of InxGa1-xAs on GaAs by Molecular Beam Epitaxy

1989 ◽  
Vol 28 (Part 2, No. 3) ◽  
pp. L352-L355 ◽  
Author(s):  
Hiroshi Nakao ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Strain Relaxation ◽  
Heteroepitaxial Growth ◽  
Surface Lattice ◽  
Initial Stage

Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 107-112 ◽  
Author(s):  
Takafumi Yao ◽  
Hiroshi Nakao ◽  
Hitoshi Kawanami ◽  
Ryuichi Toba
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Strain ◽  
Strain Relaxation

Strain Relaxation in (CdMg)Te Layers Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 182-184 ◽  
pp. 255-258
Author(s):  
H. Heinke ◽  
Franz Dieter Fischer ◽  
A. Waag ◽  
T. Litz ◽  
M. Korn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

2012 ◽  
Vol 111 (6) ◽  
pp. 064112 ◽  
Author(s):  
Miri Choi ◽  
Agham Posadas ◽  
Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Strain Relaxation

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

2018 ◽  
Vol 52 (12) ◽  
pp. 1529-1533 ◽  
Author(s):  
A. M. Mizerov ◽  
S. N. Timoshnev ◽  
M. S. Sobolev ◽  
E. V. Nikitina ◽  
K. Yu. Shubina ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Initial Stage

Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

1987 ◽  
Vol 26 (Part 2, No. 2) ◽  
pp. L114-L116 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda ◽  
Hidetoshi Takasugi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Domain Structure ◽  
Molecular Beam ◽  
Initial Stage

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

1999 ◽  
Vol 74 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
Hanxuan Li ◽  
Theda Daniels-Race ◽  
Zhanguo Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Growth Mode

Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 53 (22) ◽  
pp. 2179-2181 ◽  
Author(s):  
G. L. Zhou ◽  
K. M. Chen ◽  
W. D. Jiang ◽  
C. Sheng ◽  
X. J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Si Substrates
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