ABSTRACTX-ray diffraction has been used to characterize the relative misorientation of [001] and [111] CdTe layers grown by hot-wall epitaxy on GaAs substrates. The magnitude of the misorientation of the CdTe epitaxial layer relative to the GaAs substrate depends on the magnitude of the miscut of the substrate; in addition, the [111] oriented CdTe exhibited significantly larger misorientations than did the [001] CdTe films. The azimuthal direction of the tilt of the epitaxial layer depends strongly on the nominal crystallographic orientation of the film. The [111] CdTe exhibited an azimuthal dependence of the tilt that is approximately coincident with the miscut of the substrate, while the azimuthal direction of tilt in the [001] CdTe layers differed from the substrate miscut direction by as much as 116°. These observations of epitaxial layer misorientation are discussed in terms of a dislocation model for layer tilt and azimuthal rotation in lattice-mismatched epitaxial systems.
Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates