Bulk-like low-temperature photoluminescence from CdTe/GaAs grown by hot-wall epitaxy

1990 ◽  
Vol 101 (1-4) ◽  
pp. 190-194 ◽  
Author(s):  
T. Schmidt ◽  
H. Sitter ◽  
K. Lischka
2006 ◽  
Vol 321-323 ◽  
pp. 1306-1308
Author(s):  
Sang Youl Lee ◽  
Kwang Joon Hong

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively. The defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I2 (Do, X), bounded to the neutral donor associated with the Se-vacancy. This donorimpurity binding energy was calculated to be 25.3 meV. The exciton peak, I1 d, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy.


1989 ◽  
Vol 55 (12) ◽  
pp. 1220-1222 ◽  
Author(s):  
K. Lischka ◽  
T. Schmidt ◽  
A. Pesek ◽  
H. Sitter

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  

2016 ◽  
Vol 169 ◽  
pp. 326-333 ◽  
Author(s):  
S. Pal ◽  
A. Sarkar ◽  
P. Kumar ◽  
D. Kanjilal ◽  
T. Rakshit ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document