Laser melting of thin silicon films

1991 ◽  
Vol 114 (3) ◽  
pp. 446-466 ◽  
Author(s):  
L.N. Brush ◽  
G.B. McFadden ◽  
S.R. Coriell
Keyword(s):  
Silicon Films ◽  
Laser Melting ◽  
Thin Silicon

Transient nucleation following pulsed-laser melting of thin silicon films

1991 ◽  
Vol 43 (12) ◽  
pp. 9851-9855 ◽  
Author(s):  
S. R. Stiffler ◽  
Michael O. Thompson ◽  
P. S. Peercy
Keyword(s):  
Pulsed Laser ◽  
Silicon Films ◽  
Laser Melting ◽  
Transient Nucleation ◽  
Thin Silicon

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon

A Study of the CMP Effect on the Quality of Thin Silicon Films Crystallized by Using the ??-Czochralski Process

2009 ◽  
Vol 54 (9(5)) ◽  
pp. 432-436 ◽  
Author(s):  
J. Derakhshandeh ◽  
M. R. Tajari Mofrad ◽  
R. Ishihara ◽  
J. Van der Cingel ◽  
C. I. M. Beenakker
Keyword(s):  
Silicon Films ◽  
Thin Silicon ◽  
Czochralski Process
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