Real‐time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs

Applied Physics Letters ◽

10.1063/1.109293 ◽

1993 ◽

Vol 62 (20) ◽

pp. 2551-2553 ◽

Author(s):

B. Y. Maa ◽

P. D. Dapkus ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Atomic Layer ◽

High Energy ◽

Beam Intensity ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

Download Full-text

Direct observation of GaAs atomic layer epitaxy by reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.101666 ◽

1989 ◽

Vol 55 (12) ◽

pp. 1244-1246 ◽

Author(s):

T. H. Chiu

Keyword(s):

Electron Diffraction ◽

Direct Observation ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

Download Full-text

Observation of different reflected high-energy electron diffraction patterns during atomic layer epitaxy growth of CdTe epilayers

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90829-t ◽

1991 ◽

Vol 115 (1-4) ◽

pp. 692-697 ◽

Author(s):

W. Faschinger ◽

P. Juza ◽

H. Sitter

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Diffraction Patterns

Download Full-text

Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Journal of Applied Physics ◽

10.1063/1.352976 ◽

1993 ◽

Vol 73 (7) ◽

pp. 3291-3294 ◽

Author(s):

Kun‐jing Lee ◽

Joseph Ya‐min Lee ◽

Yu‐jeng Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Annealing Method

Download Full-text

Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor: Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.1051 ◽

1993 ◽

Vol 32 (Part 1, No. 3A) ◽

pp. 1051-1055 ◽

Author(s):

Kuninori Kitahara ◽

Masashi Ozeki ◽

Kazuo Nakajima

Keyword(s):

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Chemical Vapor Deposition Reactor

Download Full-text

Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)

Physical Review B ◽

10.1103/physrevb.52.7822 ◽

1995 ◽

Vol 52 (11) ◽

pp. 7822-7825 ◽

Author(s):

B. Daudin ◽

S. Tatarenko ◽

D. Brun-Le Cunff

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

Download Full-text

Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01383-9 ◽

1999 ◽

Vol 201-202 ◽

pp. 490-493 ◽

Author(s):

Akihiro Ohtake ◽

Takashi Hanada ◽

Kenta Arai ◽

Takuji Komura ◽

Shiro Miwa ◽

...

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Total Reflection ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

X Ray ◽

Reflection Angle

Download Full-text

Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chaleogenides

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l942 ◽

1986 ◽

Vol 25 (Part 2, No. 12) ◽

pp. L942-L944 ◽

Author(s):

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Dynamic Reflection

Download Full-text

Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growth

In Situ Characterization of Thin Film Growth ◽

10.1533/9780857094957.3.180 ◽

2011 ◽

pp. 180-211 ◽

Author(s):

P.G. Staib

Keyword(s):

Thin Film ◽

Electron Diffraction ◽

Real Time ◽

Film Growth ◽

High Energy ◽

Thin Film Growth ◽

Energy Electron ◽

High Energy Electron ◽

Surface Monitoring

Download Full-text

Software package for reflection high energy electron diffraction beam intensity measurement and analysis system

High-Performance Computing and Networking - Lecture Notes in Computer Science ◽

10.1007/bfb0020402 ◽

2005 ◽

pp. 377-379

Author(s):

G. E. Cirlin ◽

G. M. Guryanov ◽

N. P. Korneeva ◽

Yu. B. Samsonenko

Keyword(s):

Electron Diffraction ◽

Software Package ◽

High Energy ◽

Intensity Measurement ◽

Beam Intensity ◽

Energy Electron ◽

High Energy Electron ◽

Measurement And Analysis ◽

Analysis System

Download Full-text

Atomic layer controlled doping by reflection high‐energy electron diffraction during epitaxial growth

Journal of Applied Physics ◽

10.1063/1.351036 ◽

1992 ◽

Vol 71 (6) ◽

pp. 2650-2654 ◽

Author(s):

Ziqiang Zhu ◽

Mitsuo Kawashima ◽

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Controlled Doping

Download Full-text