Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasers

1992 ◽  
Vol 124 (1-4) ◽  
pp. 553-557 ◽  
Author(s):  
T.M. Cockerill ◽  
J. Honig ◽  
D.V. Forbes ◽  
K.J. Beernink ◽  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Optical Loss ◽  
Strained Layer

Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

1992 ◽  
Vol 4 (4) ◽  
pp. 296-299 ◽  
Author(s):  
L.M. Miller ◽  
K.J. Beernink ◽  
J.T. Verdeyen ◽  
J.J. Coleman ◽  
J.S. Hughes ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ridge Waveguide ◽  
Distributed Feedback ◽  
Strained Layer ◽  
Heterostructure Laser

Characterization of strained-layer and asymmetrically coupled multiple-quantum-well electro-optic modulators

1994 ◽  
Author(s):  
Michael J. Hayduk ◽  
Raymond K. Boncek ◽  
Steven T. Johns ◽  
Douglas A. Norton ◽  
Mark F. Krol ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Electro Optic

Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers

1992 ◽  
Vol 18 (1-2) ◽  
pp. 57-74 ◽  
Author(s):  
P.J.A Thijs ◽  
J.J.M Binsma ◽  
L.F Tiemeijer ◽  
P.I Kuindersma ◽  
T van Dongen
Keyword(s):  
Quantum Well ◽  
Low Pressure ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Movpe Growth

scholarly journals Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained Layer Single Quantum Well High Power Laser Diodes

2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
Author(s):  
B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
High Power Laser ◽  
Power Laser ◽  
Broad Area ◽  
Single Quantum Well ◽  
Strained Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Design and characterization of a low-optical-loss UV-C laser diode

2020 ◽  
Vol 59 (9) ◽  
pp. 094001 ◽  
Author(s):  
Ziyi Zhang ◽  
Maki Kushimoto ◽  
Tadayoshi Sakai ◽  
Naoharu Sugiyama ◽  
Leo J. Schowalter ◽  
...  
Keyword(s):  
Laser Diode ◽  
Optical Loss ◽  
Uv C
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