Surface morphology of metalorganic vapour phase epitaxy grown InP observed by atomic force microscopy

1993 ◽  
Vol 133 (1-2) ◽  
pp. 185-188 ◽  
Author(s):  
C.C. Hsu ◽  
T.K.S. Wong ◽  
I.H. Wilson
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metalorganic Vapour Phase Epitaxy

Atomic force microscopy study of heteroepitaxy processes by metalorganic vapour phase epitaxy

1997 ◽  
Vol 113-114 ◽  
pp. 371-376 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Hideki Suzuki ◽  
Hiroyuki Nashiki ◽  
Toshio Obinata ◽  
Ikuo Suemune ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Microscopy Study ◽  
Atomic Force Microscopy Study ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metalorganic Vapour Phase Epitaxy

Atomic Force Microscopy of Growth Features on Epitaxial CdHgTe Films

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Aindow ◽  
T. T. Cheng ◽  
I. P. Jones ◽  
M. G. Astles ◽  
D. J. Williams
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Vapour ◽  
Interdiffused Multilayer Process ◽  
Growth Features ◽  
Edge Dislocations

ABSTRACTAtomic Force Microscopy has been used to observe the details of surface morphology on CdxHg1-xTe epitaxial films. On films grown by liquid phase epitaxy (LPE), tiered pyramidal features were observed and these are consistent with enhanced nucleation and growth at emergent edge dislocations which thread through from subgrain boundaries in the substrate. On films grown by metal-organic vapour phase epitaxy (MOVPE) using the interdiffused multilayer process (IMP), terraces and steps are observed as expected but the step edges are decorated. It is suggested that this corresponds to the deposition of one binary layer in Volmer-Weber mode.

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Surface morphology studies on sublimation grown GaN by atomic force microscopy

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES

2004 ◽  
Vol 11 (03) ◽  
pp. 265-269
Author(s):  
O. P. SINHA ◽  
P. C. SRIVASTAVA ◽  
V. GANESAN
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Target Surface ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Induced Stress

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

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