Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy

2018 ◽  
pp. 657-660
Author(s):  
C Liu ◽  
C J Deatcher ◽  
M G Cheong ◽  
I M Watson
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Vapour

Atomic Force Microscopy of Growth Features on Epitaxial CdHgTe Films

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Aindow ◽  
T. T. Cheng ◽  
I. P. Jones ◽  
M. G. Astles ◽  
D. J. Williams
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Vapour ◽  
Interdiffused Multilayer Process ◽  
Growth Features ◽  
Edge Dislocations

ABSTRACTAtomic Force Microscopy has been used to observe the details of surface morphology on CdxHg1-xTe epitaxial films. On films grown by liquid phase epitaxy (LPE), tiered pyramidal features were observed and these are consistent with enhanced nucleation and growth at emergent edge dislocations which thread through from subgrain boundaries in the substrate. On films grown by metal-organic vapour phase epitaxy (MOVPE) using the interdiffused multilayer process (IMP), terraces and steps are observed as expected but the step edges are decorated. It is suggested that this corresponds to the deposition of one binary layer in Volmer-Weber mode.

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

2005 ◽  
Vol 892 ◽  
Author(s):  
Rachel Oliver ◽  
Menno J. Kappers ◽  
Joy Sumner ◽  
Ranjan Datta ◽  
Colin J. Humphreys
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Threading Dislocation ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

AbstractFast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Atomic force microscopy study of heteroepitaxy processes by metalorganic vapour phase epitaxy

1997 ◽  
Vol 113-114 ◽  
pp. 371-376 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Hideki Suzuki ◽  
Hiroyuki Nashiki ◽  
Toshio Obinata ◽  
Ikuo Suemune ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Vapour Phase ◽  
Microscopy Study ◽  
Atomic Force Microscopy Study ◽  
Vapour Phase Epitaxy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metalorganic Vapour Phase Epitaxy

scholarly journals Crystal growth of the core and rotated epitaxial shell of a heterometallic metal-organic framework revealed with atomic force microscopy

2021 ◽  
Author(s):  
Fajar Inggit Pambudi ◽  
Michael William Anderson ◽  
Martin Attfield
Keyword(s):  
Atomic Force Microscopy ◽  
Crystal Growth ◽  
Metal Organic Framework ◽  
Metal Organic Frameworks ◽  
Force Microscopy ◽  
The Core ◽  
Atomic Force ◽  
Metal Organic ◽  
Surface Crystal ◽  
Organic Framework

Atomic force microscopy has been used to determine the surface crystal growth of two isostructural metal-organic frameworks, [Zn2(ndc)2(dabco)] (ndc = 1,4-naphthalene dicarboxylate, dabco = 4-diazabicyclo[2.2.2]octane) (1) and [Cu2(ndc)2(dabco)] (2) from...

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Sonication of 2D metal-organic framework for atomic force microscopy

2020 ◽  
Author(s):  
Pavel Alekseevskiy ◽  
Andrei N. Yankin ◽  
Marina O. Barsukova ◽  
Valentin A. Milichko
Keyword(s):  
Atomic Force Microscopy ◽  
Metal Organic Framework ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Framework
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