Development of a New Electrochemical Atomic Force Microscopy Tool for Obtaining Surface Morphology Through Electrochemical Reaction

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

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MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES

Surface Review and Letters ◽

10.1142/s0218625x04006177 ◽

2004 ◽

Vol 11 (03) ◽

pp. 265-269

Author(s):

O. P. SINHA ◽

P. C. SRIVASTAVA ◽

V. GANESAN

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Target Surface ◽

Silicon Surfaces ◽

Force Microscopy ◽

Atomic Force ◽

Induced Stress

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

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Surface morphology of metalorganic vapour phase epitaxy grown InP observed by atomic force microscopy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90120-l ◽

1993 ◽

Vol 133 (1-2) ◽

pp. 185-188 ◽

Cited By ~ 2

Author(s):

C.C. Hsu ◽

T.K.S. Wong ◽

I.H. Wilson

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Vapour Phase ◽

Vapour Phase Epitaxy ◽

Force Microscopy ◽

Atomic Force ◽

Metalorganic Vapour Phase Epitaxy

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Surface Morphology of Polyphenylsilsesquioxanes/Hydroxyl-Functionalized Polystyrene Blends Investigated by Atomic Force Microscopy

Polymer Journal ◽

10.1295/polymj.32.531 ◽

2000 ◽

Vol 32 (7) ◽

pp. 531-536 ◽

Cited By ~ 6

Author(s):

Dong Wook Kim ◽

Seung Sang Hwang ◽

Soon Man Hong ◽

Eung-Chan Lee

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Force Microscopy ◽

Atomic Force

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Optical force microscopy: combining light with atomic force microscopy for nanomaterial identification

Nanophotonics ◽

10.1515/nanoph-2019-0181 ◽

2019 ◽

Vol 8 (10) ◽

pp. 1659-1671

Author(s):

Nusrat Jahan ◽

Hanwei Wang ◽

Shensheng Zhao ◽

Arkajit Dutta ◽

Hsuan-Kai Huang ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Spatial Resolution ◽

Optical Force ◽

Scanning Probe ◽

Force Microscopy ◽

Atomic Force ◽

Recent Advances ◽

Spectroscopic Information

AbstractScanning probe techniques have evolved significantly in recent years to detect surface morphology of materials down to subnanometer resolution, but without revealing spectroscopic information. In this review, we discuss recent advances in scanning probe techniques that capitalize on light-induced forces for studying nanomaterials down to molecular specificities with nanometer spatial resolution.

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Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

MRS Proceedings ◽

10.1557/proc-482-93 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 2

Author(s):

P. W. Yip ◽

S.-Q. Wang ◽

A. J. Drehman ◽

L. D. Zhu ◽

P. E. Norris

Keyword(s):

Atomic Force Microscopy ◽

Surface Morphology ◽

Deposition Temperature ◽

Yellow Luminescence ◽

X Ray Diffraction ◽

Rocking Curve ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Initial Stage

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.

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Growth of Germanium on Porous Silicon (001)

MRS Proceedings ◽

10.1557/proc-452-255 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 3

Author(s):

W. H. Thompson ◽

Z. Yamani ◽

H. M. Nayfeh ◽

M.-A. Hasan ◽

J. E. Greene ◽

...

Keyword(s):

Surface Roughness ◽

Atomic Force Microscopy ◽

Porous Silicon ◽

Molecular Beam Epitaxy ◽

Surface Morphology ◽

Molecular Beam ◽

Porous Si ◽

Force Microscopy ◽

Atomic Force ◽

Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

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