MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES
Keyword(s):
The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.
2014 ◽
Vol 14
(2)
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pp. 155-160
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1999 ◽
Vol 200
(3-4)
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pp. 348-352
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2002 ◽
Vol 106
(26)
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pp. 6696-6705
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2019 ◽
Vol 19
(3)
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pp. 1242-1247
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1993 ◽
Vol 133
(1-2)
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pp. 185-188
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