Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxy

1993 ◽  
Vol 132 (1-2) ◽  
pp. 331-334 ◽  
Author(s):  
X. Zhang ◽  
D.W. Pashley ◽  
J.H. Neave ◽  
P.N. Fawcett ◽  
J. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Transmission Electron Microscopy Observation ◽  
High Energy Electron ◽  
Microscopy Observation ◽  
Transmission Electron

MBE-Grown Epitaxial Co/Cr Superlattices

1991 ◽  
Vol 231 ◽  
Author(s):  
W. Vavra ◽  
S. Elagoz ◽  
Roy Clarke ◽  
C. Uher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Squid Magnetometry ◽  
High Energy Electron ◽  
Deposition Rates ◽  
Saturation Field ◽  
Transmission Electron ◽  
Hall Effect Measurements

AbstractA series of epitaxial Co/Cr superlattices has been grown by molecular beam epitaxy. The Cr is in a metastable hcp phase as confirmed by transmission electron microscopy, selected area diffraction, and reflection high energy electron diffraction. The Cr layers are 10Å thick in all samples while the Co layers are varied from 12Å to 40Å. The diffusion between Co and Cr is studied by SQUID magnetometry and indicates step-like interfaces in the best samples. Interfacial sharpness has also been found to be unusually sensitive to Co deposition rates, and in contrast with other superlattice systems, we find that sharper interfaces enhance parallel anisotropy. Hall effect measurements of the saturation field are within 10% of SQUID values. Magnetoresistance at 4.2K is only 1/3% which we believe is a consequence of the high density of states at the Fermi level of hcp Cr.

A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
P. D. Brown ◽  
D. M. Tricker ◽  
Y. Xin ◽  
T. S. Chengt ◽  
C. T. Foxont ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Energy ◽  
High Energy Electron ◽  
Conventional Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Spectral Distributions ◽  
Scanning Electron

AbstractEpitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations in spatial and spectral distributions of luminescence can arise due to embedded cubic inclusions within the hexagonal GaN matrix. The strong effect of doping on the crystallinity of the GaN deposit is illustrated, as determined by RHEED in a TEM.

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