Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron microscopy

2000 ◽  
Vol 7 (3-4) ◽  
pp. 876-880 ◽  
Author(s):  
S Koh ◽  
T Kondo ◽  
T Ishiwada ◽  
H Sawada ◽  
H Ichinose ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Transmission Electron

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
P. D. Brown ◽  
D. M. Tricker ◽  
Y. Xin ◽  
T. S. Chengt ◽  
C. T. Foxont ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Energy ◽  
High Energy Electron ◽  
Conventional Transmission Electron Microscopy ◽  
Transmission Electron ◽  
Spectral Distributions ◽  
Scanning Electron

AbstractEpitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations in spatial and spectral distributions of luminescence can arise due to embedded cubic inclusions within the hexagonal GaN matrix. The strong effect of doping on the crystallinity of the GaN deposit is illustrated, as determined by RHEED in a TEM.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

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