Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors

1993 ◽  
Vol 127 (1-4) ◽  
pp. 29-35 ◽  
Author(s):  
Kanji Yoh ◽  
Kazumasa Kiyomi ◽  
Mitsuaki Yano ◽  
Masataka Inoue
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Double Quantum ◽  
Molecular Beam Epitaxial ◽  
Heterojunction Field Effect Transistors ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

Ammonia-molecular-beam epitaxial growth and optical properties of GaN/AlGaN quantum wells

2002 ◽  
Vol 91 (12) ◽  
pp. 9685 ◽  
Author(s):  
H. Tang ◽  
J. B. Webb ◽  
P. Sikora ◽  
S. Raymond ◽  
J. A. Bardwell
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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