Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Journal of Applied Physics ◽

10.1063/1.345368 ◽

1990 ◽

Vol 67 (7) ◽

pp. 3323-3327 ◽

Author(s):

Kevin Chang ◽

Pallab Bhattacharya ◽

Richard Lai

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Device Performance ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Journal of Applied Physics ◽

10.1063/1.347140 ◽

1990 ◽

Vol 68 (1) ◽

pp. 347-350 ◽

Author(s):

J. Pamulapati ◽

R. Lai ◽

G. I. Ng ◽

Y. C. Chen ◽

P. R. Berger ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Growth Modes ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Thin Solid Films ◽

10.1016/0040-6090(91)90373-6 ◽

1991 ◽

Vol 196 (2) ◽

pp. 295-303 ◽

Author(s):

J. Zhang ◽

N.C. Tien ◽

E.W. Lin ◽

H.H. Wieder ◽

W.H. Ku ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90571-d ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 29-35 ◽

Author(s):

Kanji Yoh ◽

Kazumasa Kiyomi ◽

Mitsuaki Yano ◽

Masataka Inoue

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Double Quantum ◽

Molecular Beam Epitaxial ◽

Heterojunction Field Effect Transistors ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586807 ◽

1993 ◽

Vol 11 (3) ◽

pp. 601 ◽

Author(s):

M. V. Baeta Moreira

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Molecular Beam Epitaxial ◽

Effect Transistor ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583751 ◽

1987 ◽

Vol 5 (3) ◽

pp. 785 ◽

Author(s):

H. T. Griem

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Electron Gas ◽

Dimensional Electron ◽

Gas Field ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor

Journal of Applied Physics ◽

10.1063/1.348454 ◽

1991 ◽

Vol 69 (7) ◽

pp. 3941-3949 ◽

Author(s):

H. Toyoshima ◽

K. Onda ◽

E. Mizuki ◽

N. Samoto ◽

M. Kuzuhara ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Channel Modulation ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Effect Transistor ◽

Molecular Beam Epitaxial Growth

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Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584625 ◽

1989 ◽

Vol 7 (4) ◽

pp. 680 ◽

Author(s):

W. R. Hitchens

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Molecular Beam Epitaxial ◽

Effect Transistor ◽

Molecular Beam Epitaxial Growth

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Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00978-5 ◽

1997 ◽

Vol 175-176 ◽

pp. 883-887 ◽

Author(s):

J.H. Roslund ◽

O. Zsebők ◽

G. Swenson ◽

T.G. Andersson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.08.032 ◽

2011 ◽

Vol 334 (1) ◽

pp. 113-117 ◽

Author(s):

Kevin Goodman ◽

Vladimir Protasenko ◽

Jai Verma ◽

Tom Kosel ◽

Grace Xing ◽

...

Keyword(s):

Gallium Nitride ◽

Aluminum Oxide ◽

Epitaxial Growth ◽

Molecular Beam ◽

Atomic Layer ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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