Tri-arc Czochralski growth of single crystal molybdenum disilicide

1996 ◽  
Vol 160 (1-2) ◽  
pp. 66-70 ◽  
Author(s):  
John E. Barnes ◽  
Kevin P. Trumble
Keyword(s):  
Single Crystal ◽  
Molybdenum Disilicide ◽  
Czochralski Growth

scholarly journals Single-Crystal MoO3 Micrometer and Millimeter Belts Prepared from Discarded Molybdenum Disilicide Heating Elements

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Xiaolong Hou ◽  
Juntong Huang ◽  
Mingqiang Liu ◽  
Xibao Li ◽  
Zhihui Hu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Molybdenum Disilicide

Optical, Structural and Spectroscopic Characterization of ZnS Nanocrystals Embedded in KBr Single Crystal Matrix Grown by Czochralski Method

2021 ◽  
Vol 406 ◽  
pp. 274-284
Author(s):  
Soria Zeroual ◽  
Mohammed Sadok Mahboub ◽  
Ghani Rihia ◽  
Mourad Mimouni ◽  
Ghougali Mebrouk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Absorption Edge ◽  
Quantum Confinement Effect ◽  
Blue Shift ◽  
Czochralski Method ◽  
Spectroscopic Characterization ◽  
Czochralski Growth ◽  
X Ray Diffraction ◽  
Crystal Matrix ◽  
Zns Nanocrystals

ZnS nanocrystals were embedded in a KBr single crystal matrix using the Czochralski growth technique. The X-ray diffraction, FT-IR and optical spectroscopy revealed the incorporation of ZnS nanocrystals. A blue shift of the absorption edge of the obtained samples has been observed, indicating the quantum confinement effect. The optical band-gap is estimated to be about 4.67 eV. Two excitonic peaks appeared at 300.4 nm and 271 nm. The average nanocrystal size was derived from the optical spectra. Annealing led to a shift in the absorption edge towards longer wavelengths and an increasing of the emissions intensity. Raman lines of the nanoparticles are broader and frequency-shifted compared to those of the bulk crystals. These results show that KBr is a good matrix-host of ZnS nanocrystals, and that the elaborated samples can be used for important technological applications.

Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth

2004 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Hiroyuki Ishibashi ◽  
Kazuhisa Kurashige ◽  
Akihiro Gunji
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
Temperature Distribution ◽  
Thermal Radiation ◽  
Single Crystal ◽  
Radiation Heat Transfer ◽  
Heat Transfer Analysis ◽  
Czochralski Growth ◽  
Radiation Heat ◽  
Radial Temperature

Temperature distributions and thermal stress distributions in a semi-transparent GSO crystal during Czochralski (CZ) single crystal growth were numerically investigated by thermal radiation heat transfer analysis and anisotropy stress analysis. As GSO has special optical properties, such as semi-transparency at a wavelength shorter than 4.5 μm, thermal radiation heat transfer was calculated by the Monte Carlo method. These calculations showed that thermal stress is caused by the radial temperature distribution on the outside of the upper part of the crystal. To reduce this temperature distribution, the following three manufacturing conditions were found to be effective: use a sharp taper angle of the crystal, install a lid to the top of the insulator, and install a ring around the tapered part of the crystal.

Thermal stress analysis of silicon bulk single crystal during Czochralski growth

1992 ◽  
Vol 125 (1-2) ◽  
pp. 102-111 ◽  
Author(s):  
N. Miyazaki ◽  
H. Uchida ◽  
T. Munakata ◽  
K. Fujioka ◽  
Y. Sugino
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Stress Analysis ◽  
Bulk Single Crystal ◽  
Czochralski Growth ◽  
Thermal Stress Analysis ◽  
Silicon Bulk
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