Dependence of the structural properties of ZnSe on GaAs substrate orientation

1995 ◽  
Vol 150 ◽  
pp. 749-754 ◽  
Author(s):  
P.J. Parbrook ◽  
M. Ishikawa ◽  
Y. Nishikawa ◽  
S. Saito ◽  
M. Onomura ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gaas Substrate ◽  
Substrate Orientation

Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface

1992 ◽  
Vol 281 ◽  
Author(s):  
X. W. Lin ◽  
Z. Liliental-Weber ◽  
W. Swider ◽  
T. McCants ◽  
N. Newman ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Current Voltage ◽  
Higher Temperature ◽  
Amorphous Interlayer

ABSTRACTUsing current-voltage measurements and high-resolution electron microscopy (HREM), we have studied the electrical and structural properties of Ti contacts on an atomically clean n-type GaAs (110) surface. The Ti/n-GaAs diodes are formed at room temperature in ultrahigh vacuum and in situ isochronally (10 min) annealed at temperatures ranging from 200 to 450°C. We find that the Schottky barrier height of the diodes increases by ≈0.10 eV upon annealing at 200°C and remains basically stable for higher-temperature anneals. HREM investigation reveals that Ti reacts with GaAs in its as-deposited state to form an amorphous interlayer ≈1.5 nm thick. After anneals to 450°C, extensive reactions occur at the interface, resulting in the formation of a layered structure Ti/Ga3Ti2/TiAs/GaAs, with TiAs protruding into the GaAs substrate.

Magnetic and Structural Properties of Co Thin Films Evaporated on GaAs Substrate

2014 ◽  
Vol 28 (3) ◽  
pp. 921-925 ◽  
Author(s):  
M. Tinouche ◽  
A. Kharmouche ◽  
B. Aktaş ◽  
F. Yildiz ◽  
A. N. Koçbay
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Gaas Substrate

Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate

2004 ◽  
Vol 38 (7) ◽  
pp. 833-836 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
A. G. Gladyschev ◽  
S. A. Blokhin ◽  
Yu. G. Musikhin ◽  
A. E. Zhukov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Structural Properties ◽  
Gaas Substrate ◽  
Inas Quantum Dot

Preparation and structural properties of MgO films grown on GaAs substrate

2008 ◽  
Vol 254 (12) ◽  
pp. 3635-3637 ◽  
Author(s):  
Štefan Chromik ◽  
Marianna Španková ◽  
Ivo Vávra ◽  
Jozef Liday ◽  
Peter Vogrinčič ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gaas Substrate

Influence of the GaAs substrate orientation on the composition of GaxIn1−xP (x≈0.5) grown by LPE and MOCVD

2008 ◽  
Vol 516 (22) ◽  
pp. 8092-8095 ◽  
Author(s):  
V.A. Mishurnyi ◽  
F. de Anda ◽  
A.Yu. Gorbatchev ◽  
Yu. Kudriavtsev ◽  
V.A. Elyukhin ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Substrate Orientation
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