Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface

1992 ◽  
Vol 281 ◽  
Author(s):  
X. W. Lin ◽  
Z. Liliental-Weber ◽  
W. Swider ◽  
T. McCants ◽  
N. Newman ◽  
...  
Keyword(s):  
Structural Properties ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Current Voltage ◽  
Higher Temperature ◽  
Amorphous Interlayer

ABSTRACTUsing current-voltage measurements and high-resolution electron microscopy (HREM), we have studied the electrical and structural properties of Ti contacts on an atomically clean n-type GaAs (110) surface. The Ti/n-GaAs diodes are formed at room temperature in ultrahigh vacuum and in situ isochronally (10 min) annealed at temperatures ranging from 200 to 450°C. We find that the Schottky barrier height of the diodes increases by ≈0.10 eV upon annealing at 200°C and remains basically stable for higher-temperature anneals. HREM investigation reveals that Ti reacts with GaAs in its as-deposited state to form an amorphous interlayer ≈1.5 nm thick. After anneals to 450°C, extensive reactions occur at the interface, resulting in the formation of a layered structure Ti/Ga3Ti2/TiAs/GaAs, with TiAs protruding into the GaAs substrate.

High resolution electron microscopy of ion-irradiated GdBa2Cu3O7

1991 ◽  
Vol 6 (4) ◽  
pp. 677-681 ◽  
Author(s):  
G. Van Tendeloo ◽  
M-O. Ruault ◽  
H. Bernas ◽  
M. Gasgnier
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Room Temperature ◽  
High Resolution Electron Microscopy ◽  
Extended Defects ◽  
Twin Boundaries ◽  
Resolution Electron

GdBa2Cu3O7 crystals were irradiated at room temperature with 200 keV Ne ions and 300 keV Xe ions. In situ standard TEM and further HREM studies show two types of extended defects: (i) mobile extended defects, which account for the preferential defect pinning to twin boundaries reported earlier. These defects are rapidly recovered and difficult to observe by HREM investigations; (ii) stable amorphous areas which are clearly identified by HREM observations. Their overlapping and aggregation conceivably lead to amorphization of the sample.

EPITAXY OF CdTe ON (100) GaAs

1985 ◽  
Vol 56 ◽  
Author(s):  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR ◽  
N. OTSUKA ◽  
C. CHOI
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Strong Interaction ◽  
Gaas Substrate ◽  
Specific Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Selection Of

AbstractTwo epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.

In-Situ Studies of Epitaxial Thin-Film Growth

1964 ◽  
Vol 19 (7-8) ◽  
pp. 835-843 ◽  
Author(s):  
H. Poppa
Keyword(s):  
Film Growth ◽  
High Resolution Electron Microscopy ◽  
Thin Film Growth ◽  
Continuous Observation ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Resolution Electron ◽  
Substrate Surfaces ◽  
Kinetics Of

Early stages of oriented overgrowth of Ag, Au, and Pd on thin, single-crystal substrates of mica, molybdenite, Au and Pd were studied by high-resolution electron microscopy and diffraction. Cleaning of substrate surfaces and deposition of evaporated materials were conducted inside an electron microscope. High-magnification, continuous observation during growth permitted investigation of the kinetics of growth. A number of probably elementary epitaxial processes were studied in detail. Nucleation and growth behavior was examined for different supersaturations and free surface energies of substrate and overgrowth materials. The influence of alloying on growth and the spacing of parallel moiré structures was investigated.

scholarly journals Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide alpha-FeSi-=SUB=-2-=/SUB=- nanocrystals into p-Si(001)

2018 ◽  
Vol 52 (5) ◽  
pp. 523
Author(s):  
I.A. Tarasov ◽  
M.V. Rautskii ◽  
I.A. Yakovlev ◽  
M.N. Volochaev
Keyword(s):  
Electron Transport ◽  
Room Temperature ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
Iron Silicide ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Basic Orientation ◽  
Different Temperatures ◽  
A Current

AbstractSelf-assembled growth of α-FeSi_2 nanocrystal ensembles on gold-activated and gold-free Si(001) surface by molecular beam epitaxy is reported. The microstructure and basic orientation relationship (OR) between the silicide nanocrystals and silicon substrate were analysed. The study reveals that utilisation of the gold as catalyst regulates the preferable OR of the nanocrystals with silicon and their habitus. It is shown that electron transport from α-FeSi2 phase into p-Si(001) can be tuned by the formation of (001)—or (111)—textured α-FeSi2 nanocrystals ensembles. A current-voltage characteristic of the structures with different preferable epitaxial alignment (α-FeSi_2(001)/Si(100) and α-FeSi_2(111)/Si(100)) shows good linearity at room temperature. However, it becomes non-linear at different temperatures for different ORs due to different Schottky barrier height governed by a particular epitaxial alignment of the α-FeSi_2/ p -Si interfaces.

In Situ HREm of Reactions at Interfaces

1997 ◽  
Vol 3 (S2) ◽  
pp. 621-622 ◽  
Author(s):  
R. Sinclair ◽  
T. Itoh ◽  
H. J. Lee ◽  
K. W. Kwon
Keyword(s):  
Chemical Interaction ◽  
High Resolution Electron Microscopy ◽  
Point Of View ◽  
Interface Chemistry ◽  
Amorphous Phases ◽  
Resolution Electron ◽  
Analogous Manner ◽  
The Stability ◽  
Basic Studies

Reactions at solid-solid interfaces are important both scientifically and technologically. Firstly, there is quite a wide variety of possibilities. Materials can react with one another, forming equilibrium, meta-stable or even amorphous phases. The interface can provide a means to promote phase reactions kinetically, in an analogous manner to catalysis. Even when the materials are mutually compatible chemically, the interface topography and atomic structure can evolve over the course of time. From the practical point-of-view, changes in the interface chemistry and structure can profoundly alter the physical properties. This is especially notable in thin film technology, whereby the interfaces constitute a signigicant proportion of the whole device. In this article, contributions to understanding this field are illustrated through application of in situ and high-resolution electron microscopy (HREM).Basic studies of metal-semicoductor interfacial reactions have been successfully carried out for a number of years. of increasing importance in microelectronics is the stability of layers which prevent chemical interaction, namely the diffusion barriers.

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