High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system
1995 ◽
Vol 150
◽
pp. 1281-1286
◽
1993 ◽
Vol 32
(Part 2, No. 3A)
◽
pp. L309-L311
◽
2000 ◽
Vol 17
(12)
◽
pp. 915-917
◽
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1866-1868
◽
2006 ◽
Vol 24
(3)
◽
pp. 1564
◽
1995 ◽
Vol 150
◽
pp. 1287-1291
◽
1991 ◽
Vol 111
(1-4)
◽
pp. 515-520
◽