High-current-gain small-offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy

Shey-Shi Lu;  Chung-Cheng Wu

doi:10.1109/55.192797

High-current-gain small-offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.192797 ◽

1992 ◽

Vol 13 (9) ◽

pp. 468-470 ◽

Cited By ~ 6

Author(s):

Shey-Shi Lu ◽

Chung-Cheng Wu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gas Source ◽

Offset Voltage

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High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80145-3 ◽

1995 ◽

Vol 150 ◽

pp. 1281-1286 ◽

Cited By ~ 5

Author(s):

H. Ando ◽

N. Okamoto ◽

S. Yamaura ◽

T. Tomioka ◽

T. Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Molecular Beam Epitaxy System ◽

Gas Source

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High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Grown by Gas Source Molecular Beam Epitaxy Using Trimethylamine Alane as the Aluminum Source

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l309 ◽

1993 ◽

Vol 32 (Part 2, No. 3A) ◽

pp. L309-L311 ◽

Cited By ~ 7

Author(s):

Shinji Yamaura ◽

Hideyasu Ando ◽

Naoya Okamoto ◽

Adarsh Sandhu ◽

Tsuyoshi Takahashi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Carbon Doped ◽

Gas Source ◽

Trimethylamine Alane

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High Current Gain In 0.49 Ga 0.51 P/GaAs Heterojunction Bipolar Transistors with Double Spacers Grown by Gas Source Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/17/12/021 ◽

2000 ◽

Vol 17 (12) ◽

pp. 915-917 ◽

Cited By ~ 1

Author(s):

Chen Xiao-Jie ◽

Chen Jian-Xin ◽

Chen Yi-Qiao ◽

Peng Peng ◽

Yang Quan-Kui ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Gas Source

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High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.145025 ◽

1992 ◽

Vol 13 (4) ◽

pp. 214-216 ◽

Cited By ~ 61

Author(s):

S.S. Lu ◽

C.C. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Gas Source

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Cited By ~ 11

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

Gas Source

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Cited By ~ 2

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gas Source ◽

Double Heterojunction

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High current gain, low offset voltage heterostructure emitter bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.311126 ◽

1994 ◽

Vol 15 (9) ◽

pp. 336-338 ◽

Cited By ~ 31

Author(s):

H.R. Chen ◽

C.Y. Chang ◽

C.P. Lee ◽

C.H. Huang ◽

J.S. Tsang ◽

...

Keyword(s):

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Offset Voltage ◽

Low Offset

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High current gain (<2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226854 ◽

2004 ◽

Author(s):

T. Makimoto ◽

K. Kumakura ◽

N. Kobayashi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

High Current ◽

Offset Voltage ◽

Double Heterojunction

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Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.31744 ◽

1989 ◽

Vol 10 (6) ◽

pp. 274-276 ◽

Cited By ~ 53

Author(s):

T. Won ◽

S. Iyer ◽

S. Agarwala ◽

H. Morkoc

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Offset Voltage

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InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base

IEEE Electron Device Letters ◽

10.1109/55.145042 ◽

1992 ◽

Vol 13 (5) ◽

pp. 247-249 ◽

Cited By ~ 30

Author(s):

R.C. Gee ◽

T.-P. Chin ◽

C.W. Tu ◽

P.M. Asbeck ◽

C.L. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

Gas Source

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